Electrical characterization of defects introduced in n-type N-doped 4H-SiC during electron beam exposure

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dc.contributor.author Omotoso, Ezekiel
dc.contributor.author Meyer, W.E. (Walter Ernst)
dc.contributor.author Auret, F.D. (Francois Danie)
dc.contributor.author Coelho, Sergio M.M.
dc.contributor.author Ngoepe, P.N.M. (Phuti Ngako Mahloka)
dc.date.accessioned 2017-05-11T08:51:04Z
dc.date.available 2017-05-11T08:51:04Z
dc.date.issued 2016
dc.description.abstract Deep level transient spectroscopy (DLTS) was used to characterize the defects introduced in n-type, N-doped, 4H-SiC while being exposed to electron beam evaporation conditions. This was done by heating a tungsten source using an electron beam current of 100 mA, which was not sufficient to evaporate tungsten. Two new defects were introduced during the exposure of 4H-SiC samples to electron beam deposition conditions (without metal deposition) after resistively evaporated nickel Schottky contacts. We established the identity of these defects by comparing their signatures to those of high energy particle irradiation induced defects of the same materials. The defect E0.42 had acceptor-like behaviour and could be attributed to be a silicon or carbon vacancy. The E0.71 had intrinsic nature and was linked to a carbon vacancy and/or carbon interstials. en_ZA
dc.description.department Physics en_ZA
dc.description.librarian hb2017 en_ZA
dc.description.sponsorship The National Research Foundation (NRF) of South African (Grant specific unique reference number (UID) 78838). en_ZA
dc.description.uri https://www.scientific.net/SSP en_ZA
dc.identifier.citation Omotoso, E, Meyer, WE, Auret, FD, Coelho, SMM & Ngoepe PNM 2016, 'Electrical characterization of defects introduced in n-type N-doped 4H-SiC during electron beam exposure', Solid State Phenomena, vol. 242, pp. 427-455. en_ZA
dc.identifier.issn 1012-0394 (print)
dc.identifier.issn 1662-9779 (online)
dc.identifier.other 10.4028/www.scientific.net/SSP.242.427
dc.identifier.uri http://hdl.handle.net/2263/60323
dc.language.iso en en_ZA
dc.publisher Trans Tech Publications en_ZA
dc.rights © 2016 by Trans Tech Publications Inc. All Rights Reserved. en_ZA
dc.subject Silicon carbide en_ZA
dc.subject Defects en_ZA
dc.subject Electron beam exposure en_ZA
dc.subject Deep level transient spectroscopy (DLTS) en_ZA
dc.title Electrical characterization of defects introduced in n-type N-doped 4H-SiC during electron beam exposure en_ZA
dc.type Postprint Article en_ZA


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