dc.contributor.author |
Auret, Francois Danie
|
|
dc.contributor.author |
Meyer, Walter Ernst
|
|
dc.contributor.author |
Diale, M. (Mmantsae Moche)
|
|
dc.contributor.author |
Janse van Rensburg, Pieter Johan
|
|
dc.contributor.author |
Song, S.F.
|
|
dc.contributor.author |
Temst, K.
|
|
dc.contributor.author |
Vantomme, A.
|
|
dc.date.accessioned |
2016-10-19T10:24:10Z |
|
dc.date.available |
2016-10-19T10:24:10Z |
|
dc.date.issued |
2011-03 |
|
dc.description.abstract |
Gallium nitride (GaN), grown by HVPE, was implanted with 300 keV Eu ions and then
annealed at 1000 oC . Deep level transient spectroscopy (DLTS) and Laplace DLTS (L-DLTS) were
used to characterise the ion implantation induced defects in GaN. Two of the implantation induced
defects, E1 and E2, with DLTS peaks in the 100 – 200 K temperature range, had DLTS signals that
could be studied with L-DLTS. We show that these two defects, with energy levels of 0.18 eV and
0.27 eV below the conduction band, respectively, are two configurations of a metastable defect.
These two defect states can be reproducibly removed and re-introduced by changing the pulse, bias
and temperature conditions, and the transformation processes follow first order kinetics. |
en_ZA |
dc.description.department |
Physics |
en_ZA |
dc.description.librarian |
hb2016 |
en_ZA |
dc.description.sponsorship |
The South African National
Research Foundation, the Fund for Scientific Research, Flanders (FWO), the Concerted Action of
the KULeuven (GOA/2009/006), the Inter-university Attraction Pole (IAP P6/42) and the Center of
Excellence Programme (INPAC EF/05/005). |
en_ZA |
dc.description.uri |
http://www.ttp.net/0255-5476.html |
en_ZA |
dc.identifier.citation |
F.D. Auret, W.E. Meyer, M. Diale, P.J. Janse Van Rensburg, S.F. Song, K. Temst, A. Vantomme, 2011, "Electrical Characterization of Metastable Defects Introduced in GaN by Eu-Ion Implantation", Materials Science Forum, vols. 679-680, pp. 804-807. |
en_ZA |
dc.identifier.issn |
0255-5476 |
|
dc.identifier.other |
10.4028/www.scientific.net/MSF.679-680.804 |
|
dc.identifier.uri |
http://hdl.handle.net/2263/57382 |
|
dc.language.iso |
en |
en_ZA |
dc.publisher |
Trans Tech |
en_ZA |
dc.rights |
© 2011 by Trans Tech Publications Inc. All Rights Reserved. |
en_ZA |
dc.subject |
Gallium Nitride (GaN) |
en_ZA |
dc.subject |
Ion implantation |
en_ZA |
dc.subject |
Metastable defects |
en_ZA |
dc.subject |
Deep level transient spectroscopy (DLTS) |
en_ZA |
dc.title |
Electrical characterization of metastable defects introduced in GaN by eu-ion implantation |
en_ZA |
dc.type |
Postprint Article |
en_ZA |