dc.contributor.author |
Paradzah, Alexander Tapera
|
|
dc.contributor.author |
Omotoso, Ezekiel
|
|
dc.contributor.author |
Legodi, Matshisa Johannes
|
|
dc.contributor.author |
Auret, Francois Danie
|
|
dc.contributor.author |
Meyer, Walter Ernst
|
|
dc.contributor.author |
Diale, M. (Mmantsae Moche)
|
|
dc.date.accessioned |
2016-09-21T08:12:55Z |
|
dc.date.issued |
2016-08 |
|
dc.description.abstract |
The effect of high energy electron (HEE) irradiation on Ni/4H-SiC Schottky barrier diodes was evaluated by
current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature. Electron irradiation
was achieved by using a radioactive strontium source with peak emission energy of 2.3 MeV. Irradiation was
performed in fluence steps of 4.9 × 1013 cm–2 until a total fluence of 5.4 × 1014 cm–2 was reached. The Schottky
barrier height determined from (I-V) measurements was not significantly changed by irradiation while that
obtained from (C-V) measurements increased with irradiation. The ideality factor was obtained before
irradiation as 1.05 and this value did not significantly change as a result of irradiation. The series resistance
increased from 47 Ω before irradiation to 74 Ω after a total electron fluence of 5.4 × 1014 cm–2. The net donor
concentration decreased with increasing irradiation fluence from 4.6 × 1014 cm–3 to 3.0 × 1014 cm–3 from which
the carrier removal rate was calculated to be 0.37 cm–1. |
en_ZA |
dc.description.department |
Physics |
en_ZA |
dc.description.embargo |
2017-08-31 |
|
dc.description.librarian |
hb2016 |
en_ZA |
dc.description.sponsorship |
National Research Foundation (NRF) of South Africa |
en_ZA |
dc.description.uri |
http://link.springer.com/journal/11664 |
en_ZA |
dc.identifier.citation |
Paradzah, A.T., Omotoso, E., Legodi, M.J., Auret, F.D., Meyer, W.E. & Diale, M. Electrical characterization of high energy electron irradiated Ni/4H-SiC Schottky barrier diodes. Journal of Electronic Materials (2016) 45: 4177. doi:10.1007/s11664-016-4609-z. |
en_ZA |
dc.identifier.issn |
0361-5235 (print) |
|
dc.identifier.issn |
1543-186X (online) |
|
dc.identifier.other |
10.1007/s11664-016-4609-z |
|
dc.identifier.uri |
http://hdl.handle.net/2263/56773 |
|
dc.language.iso |
en |
en_ZA |
dc.publisher |
Springer |
en_ZA |
dc.rights |
© 2016 The Minerals, Metals & Materials Society. The original publication is available at : http://link.springer.com/journal/11664. |
en_ZA |
dc.subject |
n-Type 4H-SiC |
en_ZA |
dc.subject |
Schottky barrier diodes |
en_ZA |
dc.subject |
Carrier removal rate |
en_ZA |
dc.subject |
Electrical characterization and high energy electron irradiation |
en_ZA |
dc.subject |
High energy electron (HEE) |
en_ZA |
dc.title |
Electrical characterization of high energy electron irradiated Ni/4H-SiC Schottky barrier diodes |
en_ZA |
dc.type |
Postprint Article |
en_ZA |