Electrical characterization of high energy electron irradiated Ni/4H-SiC Schottky barrier diodes

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dc.contributor.author Paradzah, Alexander Tapera
dc.contributor.author Omotoso, Ezekiel
dc.contributor.author Legodi, Matshisa Johannes
dc.contributor.author Auret, Francois Danie
dc.contributor.author Meyer, Walter Ernst
dc.contributor.author Diale, M. (Mmantsae Moche)
dc.date.accessioned 2016-09-21T08:12:55Z
dc.date.issued 2016-08
dc.description.abstract The effect of high energy electron (HEE) irradiation on Ni/4H-SiC Schottky barrier diodes was evaluated by current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature. Electron irradiation was achieved by using a radioactive strontium source with peak emission energy of 2.3 MeV. Irradiation was performed in fluence steps of 4.9 × 1013 cm–2 until a total fluence of 5.4 × 1014 cm–2 was reached. The Schottky barrier height determined from (I-V) measurements was not significantly changed by irradiation while that obtained from (C-V) measurements increased with irradiation. The ideality factor was obtained before irradiation as 1.05 and this value did not significantly change as a result of irradiation. The series resistance increased from 47 Ω before irradiation to 74 Ω after a total electron fluence of 5.4 × 1014 cm–2. The net donor concentration decreased with increasing irradiation fluence from 4.6 × 1014 cm–3 to 3.0 × 1014 cm–3 from which the carrier removal rate was calculated to be 0.37 cm–1. en_ZA
dc.description.department Physics en_ZA
dc.description.embargo 2017-08-31
dc.description.librarian hb2016 en_ZA
dc.description.sponsorship National Research Foundation (NRF) of South Africa en_ZA
dc.description.uri http://link.springer.com/journal/11664 en_ZA
dc.identifier.citation Paradzah, A.T., Omotoso, E., Legodi, M.J., Auret, F.D., Meyer, W.E. & Diale, M. Electrical characterization of high energy electron irradiated Ni/4H-SiC Schottky barrier diodes. Journal of Electronic Materials (2016) 45: 4177. doi:10.1007/s11664-016-4609-z. en_ZA
dc.identifier.issn 0361-5235 (print)
dc.identifier.issn 1543-186X (online)
dc.identifier.other 10.1007/s11664-016-4609-z
dc.identifier.uri http://hdl.handle.net/2263/56773
dc.language.iso en en_ZA
dc.publisher Springer en_ZA
dc.rights © 2016 The Minerals, Metals & Materials Society. The original publication is available at : http://link.springer.com/journal/11664. en_ZA
dc.subject n-Type 4H-SiC en_ZA
dc.subject Schottky barrier diodes en_ZA
dc.subject Carrier removal rate en_ZA
dc.subject Electrical characterization and high energy electron irradiation en_ZA
dc.subject High energy electron (HEE) en_ZA
dc.title Electrical characterization of high energy electron irradiated Ni/4H-SiC Schottky barrier diodes en_ZA
dc.type Postprint Article en_ZA


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