Electrical characterization of high energy electron irradiated Ni/4H-SiC Schottky barrier diodes
| dc.contributor.author | Paradzah, Alexander Tapera | |
| dc.contributor.author | Omotoso, Ezekiel | |
| dc.contributor.author | Legodi, Matshisa Johannes | |
| dc.contributor.author | Auret, Francois Danie | |
| dc.contributor.author | Meyer, Walter Ernst | |
| dc.contributor.author | Diale, M. (Mmantsae Moche) | |
| dc.contributor.email | ezekiel.omotoso@up.ac.za | en_ZA |
| dc.date.accessioned | 2016-09-21T08:12:55Z | |
| dc.date.issued | 2016-08 | |
| dc.description.abstract | The effect of high energy electron (HEE) irradiation on Ni/4H-SiC Schottky barrier diodes was evaluated by current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature. Electron irradiation was achieved by using a radioactive strontium source with peak emission energy of 2.3 MeV. Irradiation was performed in fluence steps of 4.9 × 1013 cm–2 until a total fluence of 5.4 × 1014 cm–2 was reached. The Schottky barrier height determined from (I-V) measurements was not significantly changed by irradiation while that obtained from (C-V) measurements increased with irradiation. The ideality factor was obtained before irradiation as 1.05 and this value did not significantly change as a result of irradiation. The series resistance increased from 47 Ω before irradiation to 74 Ω after a total electron fluence of 5.4 × 1014 cm–2. The net donor concentration decreased with increasing irradiation fluence from 4.6 × 1014 cm–3 to 3.0 × 1014 cm–3 from which the carrier removal rate was calculated to be 0.37 cm–1. | en_ZA |
| dc.description.department | Physics | en_ZA |
| dc.description.embargo | 2017-08-31 | |
| dc.description.librarian | hb2016 | en_ZA |
| dc.description.sponsorship | National Research Foundation (NRF) of South Africa | en_ZA |
| dc.description.uri | http://link.springer.com/journal/11664 | en_ZA |
| dc.identifier.citation | Paradzah, A.T., Omotoso, E., Legodi, M.J., Auret, F.D., Meyer, W.E. & Diale, M. Electrical characterization of high energy electron irradiated Ni/4H-SiC Schottky barrier diodes. Journal of Electronic Materials (2016) 45: 4177. doi:10.1007/s11664-016-4609-z. | en_ZA |
| dc.identifier.issn | 0361-5235 (print) | |
| dc.identifier.issn | 1543-186X (online) | |
| dc.identifier.other | 10.1007/s11664-016-4609-z | |
| dc.identifier.uri | http://hdl.handle.net/2263/56773 | |
| dc.language.iso | en | en_ZA |
| dc.publisher | Springer | en_ZA |
| dc.rights | © 2016 The Minerals, Metals & Materials Society. The original publication is available at : http://link.springer.com/journal/11664. | en_ZA |
| dc.subject | n-Type 4H-SiC | en_ZA |
| dc.subject | Schottky barrier diodes | en_ZA |
| dc.subject | Carrier removal rate | en_ZA |
| dc.subject | Electrical characterization and high energy electron irradiation | en_ZA |
| dc.subject | High energy electron (HEE) | en_ZA |
| dc.title | Electrical characterization of high energy electron irradiated Ni/4H-SiC Schottky barrier diodes | en_ZA |
| dc.type | Postprint Article | en_ZA |