The carbon-substitutional-carbon-interstitial (CsCi) defect pair in silicon from hybrid functional calculations

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dc.contributor.author Ouma, C.N.M.
dc.contributor.author Meyer, Walter Ernst
dc.date.accessioned 2016-06-14T07:11:44Z
dc.date.issued 2016-06
dc.description.abstract Using both the Perdew–Burke–Ernzerhof (PBE) functional and the hybrid functional of Heyd–Scuseria– Ernzerhof (HSE06), the metastability of the carbon-substitutional–carbon-interstitial (CsCi) defect in silicon has been investigated within density functional theory using the two experimentally proposed configurations of the defect. While the PBE functional predicted the defect complex to have both donor and acceptor levels, it did not predict any form of charge-state controlled metastability as was observed experimentally. In the case of HSE06 functional, the defect was found to exhibit charge-state controlled metastability in the 0 and 1 charge states with no metastability predicted for +1 charge state. The calculated binding energies for the neutral charge state indicate that the defect is a stable bound defect complex. en_ZA
dc.description.department Physics en_ZA
dc.description.embargo 2017-06-30
dc.description.librarian hb2016 en_ZA
dc.description.sponsorship National Research Foundation of South Africa. en_ZA
dc.description.uri http://www.elsevier.com/locate/com/matsci en_ZA
dc.identifier.citation Ouma, CNM & Meyer, WE 2016, 'The carbon-substitutional-carbon-interstitial (CsCi) defect pair in silicon from hybrid functional calculations', Computational Materials Science, vol. 118, pp. 228-241. en_ZA
dc.identifier.issn 0927-0256 (print)
dc.identifier.issn 1879-0801 (online)
dc.identifier.other 10.1016/j.commatsci.2016.03.033
dc.identifier.uri http://hdl.handle.net/2263/53099
dc.language.iso en en_ZA
dc.publisher Elsevier en_ZA
dc.rights © 2016 Elsevier. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Computational Materials Science. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Computational Materials Science, vol. 118, pp. 228-241, 2016. doi : 10.1016/j.commatsci.2016.03.033. en_ZA
dc.subject Carbon-substitutional–carbon-interstitial (CsCi) en_ZA
dc.subject Silicon en_ZA
dc.subject Defects en_ZA
dc.subject Semiconductors en_ZA
dc.subject Metastability en_ZA
dc.subject Density functional theory (DFT) en_ZA
dc.title The carbon-substitutional-carbon-interstitial (CsCi) defect pair in silicon from hybrid functional calculations en_ZA
dc.type Postprint Article en_ZA


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