Interface reactions between Pd thin films and SiC by thermal annealing and SHI irradiation

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dc.contributor.author Njoroge, E.G. (Eric)
dc.contributor.author Theron, C.C. (Chris)
dc.contributor.author Skuratov, V.A.
dc.contributor.author Wamwangi, D.
dc.contributor.author Hlatshwayo, Thulani Thokozani
dc.contributor.author Comrie, C.M.
dc.contributor.author Malherbe, Johan B.
dc.date.accessioned 2016-04-26T08:25:36Z
dc.date.issued 2016-03
dc.description.abstract The solid-state reactions between Pd thin films and 6H-SiC substrates induced by thermal annealing, room temperature swift heavy ion (SHI) irradiation and high temperature SHI irradiation have been investigated by in situ and real-time Rutherford backscattering spectrometry (RBS) and Grazing incidence X-ray diffraction (GIXRD). At room temperature, no silicides were detected to have formed in the Pd/SiC samples. Two reaction growth zones were observed in the samples annealed in situ and analysed by real time RBS. The initial reaction growth region led to formation of Pd3Si or (Pd2Si+Pd4Si) as the initial phase(s) to form at a temperature of about 450 °C. Thereafter, the reaction zone did not change until a temperature of 640 °C was attained where Pd2Si was observed to form in the reaction zone. Kinetic analysis of the initial reaction indicates very fast reaction rates of about 1.55×1015 at.cm-2/s and the Pd silicide formed grew linear with time. SHI irradiation of the Pd/SiC samples was performed by 167 MeV Xe26+ ions at room temperature at high fluences of 1.07×1014 and 4×1014 ions/cm2 and at 400 °C at lower fluences of 5×1013 ions/cm2. The Pd/SiC interface was analysed by RBS and no SHI induced diffusion was observed for room temperature irradiations. The sample irradiated at 400 °C, SHI induced diffusion was observed to occur accompanied with the formation of Pd4Si, Pd9Si2 and Pd5Si phases which were identified by GIXRD analysis. en_ZA
dc.description.department Physics en_ZA
dc.description.embargo 2017-03-31
dc.description.librarian hb2016 en_ZA
dc.description.uri http://www.elsevier.com/locate/nimb en_ZA
dc.identifier.citation Njoroge, EG, Theron, CC, Skuratov, VA, Wamwangi, D, Hlatshwayo, TT, Comrie, CM & Malherbe, JB 2016, 'Interface reactions between Pd thin films and SiC by thermal annealing and SHI irradiation', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 371, pp. 263-267. en_ZA
dc.identifier.issn 0168-583X (print)
dc.identifier.issn 1872-9584 (online)
dc.identifier.other 10.1016/j.nimb.2015.10.014
dc.identifier.uri http://hdl.handle.net/2263/52159
dc.language.iso en en_ZA
dc.publisher Elsevier en_ZA
dc.rights © 2015 Elsevier B.V. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. A. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol. 371, pp. 263-267, 2016. doi : 10.1016/j.nimb.2015.10.014 . en_ZA
dc.subject Pd en_ZA
dc.subject SiC en_ZA
dc.subject In situ RBS en_ZA
dc.subject SHI irradiation en_ZA
dc.subject Diffusion en_ZA
dc.subject Reactions en_ZA
dc.subject Swift heavy ion (SHI) en_ZA
dc.subject Rutherford backscattering spectrometry (RBS) en_ZA
dc.subject Grazing incidence X-ray diffraction (GIXRD) en_ZA
dc.title Interface reactions between Pd thin films and SiC by thermal annealing and SHI irradiation en_ZA
dc.type Postprint Article en_ZA


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