Interface reactions between Pd thin films and SiC by thermal annealing and SHI irradiation

dc.contributor.authorNjoroge, Eric Gitau
dc.contributor.authorTheron, C.C. (Chris)
dc.contributor.authorSkuratov, Vladimir Alexeevich
dc.contributor.authorWamwangi, D.
dc.contributor.authorHlatshwayo, Thulani Thokozani
dc.contributor.authorComrie, C.M.
dc.contributor.authorMalherbe, Johan B.
dc.contributor.emaileric.njoroge@up.ac.zaen_ZA
dc.date.accessioned2016-04-26T08:25:36Z
dc.date.issued2016-03
dc.description.abstractThe solid-state reactions between Pd thin films and 6H-SiC substrates induced by thermal annealing, room temperature swift heavy ion (SHI) irradiation and high temperature SHI irradiation have been investigated by in situ and real-time Rutherford backscattering spectrometry (RBS) and Grazing incidence X-ray diffraction (GIXRD). At room temperature, no silicides were detected to have formed in the Pd/SiC samples. Two reaction growth zones were observed in the samples annealed in situ and analysed by real time RBS. The initial reaction growth region led to formation of Pd3Si or (Pd2Si+Pd4Si) as the initial phase(s) to form at a temperature of about 450 °C. Thereafter, the reaction zone did not change until a temperature of 640 °C was attained where Pd2Si was observed to form in the reaction zone. Kinetic analysis of the initial reaction indicates very fast reaction rates of about 1.55×1015 at.cm-2/s and the Pd silicide formed grew linear with time. SHI irradiation of the Pd/SiC samples was performed by 167 MeV Xe26+ ions at room temperature at high fluences of 1.07×1014 and 4×1014 ions/cm2 and at 400 °C at lower fluences of 5×1013 ions/cm2. The Pd/SiC interface was analysed by RBS and no SHI induced diffusion was observed for room temperature irradiations. The sample irradiated at 400 °C, SHI induced diffusion was observed to occur accompanied with the formation of Pd4Si, Pd9Si2 and Pd5Si phases which were identified by GIXRD analysis.en_ZA
dc.description.departmentPhysicsen_ZA
dc.description.embargo2017-03-31
dc.description.librarianhb2016en_ZA
dc.description.urihttp://www.elsevier.com/locate/nimben_ZA
dc.identifier.citationNjoroge, EG, Theron, CC, Skuratov, VA, Wamwangi, D, Hlatshwayo, TT, Comrie, CM & Malherbe, JB 2016, 'Interface reactions between Pd thin films and SiC by thermal annealing and SHI irradiation', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 371, pp. 263-267.en_ZA
dc.identifier.issn0168-583X (print)
dc.identifier.issn1872-9584 (online)
dc.identifier.other10.1016/j.nimb.2015.10.014
dc.identifier.urihttp://hdl.handle.net/2263/52159
dc.language.isoenen_ZA
dc.publisherElsevieren_ZA
dc.rights© 2015 Elsevier B.V. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. A. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol. 371, pp. 263-267, 2016. doi : 10.1016/j.nimb.2015.10.014 .en_ZA
dc.subjectPden_ZA
dc.subjectSiCen_ZA
dc.subjectIn situ RBSen_ZA
dc.subjectSHI irradiationen_ZA
dc.subjectDiffusionen_ZA
dc.subjectReactionsen_ZA
dc.subjectSwift heavy ion (SHI)en_ZA
dc.subjectRutherford backscattering spectrometry (RBS)en_ZA
dc.subjectGrazing incidence X-ray diffraction (GIXRD)en_ZA
dc.titleInterface reactions between Pd thin films and SiC by thermal annealing and SHI irradiationen_ZA
dc.typePostprint Articleen_ZA

Files

Original bundle

Now showing 1 - 1 of 1
Loading...
Thumbnail Image
Name:
Njoroge_Interface_2016.pdf
Size:
497.14 KB
Format:
Adobe Portable Document Format
Description:
Postprint article

License bundle

Now showing 1 - 1 of 1
Loading...
Thumbnail Image
Name:
license.txt
Size:
1.75 KB
Format:
Item-specific license agreed upon to submission
Description: