Solid state reaction and operational stability of ruthenium Schottky contact-on-6H-SiC under argon annealing

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dc.contributor.author Munthali, Kinnock V.
dc.contributor.author Theron, C.C. (Chris)
dc.contributor.author Auret, F.D. (Francois Danie)
dc.contributor.author Coelho, Sergio M.M.
dc.contributor.author Njoroge, E.G. (Eric)
dc.date.accessioned 2016-02-12T09:30:32Z
dc.date.issued 2015-10
dc.description.abstract Thin films of ruthenium-on-6-hexagonal silicon carbide (6H-SiC) were analysed by Rutherford backscattering spectroscopy (RBS) at various annealing temperatures. Some thin film samples were also analysed by scanning electron microscope (SEM). RBS analysis indicated minimal element diffusion, and formation of ruthenium oxide after annealing at 500 oC. Large scale diffusion of ruthenium (Ru) was observed to commence at 700 oC. The SEM images indicated that the as-deposited Ru was disorderly and amorphous. Annealing of the thin film improved the grain quality of Ru. The fabricated Ru-6H-SiC Schottky barrier diodes (SBD) with nickel ohmic contacts showed excellent rectifying behaviour and linear capacitance-voltage characteristics up to an annealing temperature of 900 oC. The SBDs degraded after annealing at 1000 oC. The degradation of the SBDs is attributed to the inter-diffusion of Ru and Si at the Schottky-substrate interface. en_ZA
dc.description.embargo 2016-10-31
dc.description.librarian hb2015 en_ZA
dc.description.uri http://link.springer.com/journal/11664 en_ZA
dc.identifier.citation Munthali, KV, Theron, C, Auret, FD, Coelho, SMM & Njoroge, E 2015, 'Solid state reaction and operational stability of ruthenium Schottky contact-on-6H-SiC under argon annealing', Journal of Electronic Materials, vol. 44, no. 10, pp. 3265-3271. en_ZA
dc.identifier.issn 0361-5235 (print)
dc.identifier.issn 1543-186X (online)
dc.identifier.other 10.1007/s11664-015-3873-7
dc.identifier.uri http://hdl.handle.net/2263/51342
dc.language.iso en en_ZA
dc.publisher Springer en_ZA
dc.rights © 2015 The Minerals, Metals & Materials Society. The original publication is available at : http://link.springer.com/journal/11664. en_ZA
dc.subject Rutherford backscattering spectroscopy (RBS) en_ZA
dc.subject Scanning electron microscopy (SEM) en_ZA
dc.subject Diffusion en_ZA
dc.subject Schottky barrier diodes en_ZA
dc.subject Ruthenium en_ZA
dc.subject Ruthenium oxide en_ZA
dc.subject 6H-SiC en_ZA
dc.subject Nickel (Ni) en_ZA
dc.title Solid state reaction and operational stability of ruthenium Schottky contact-on-6H-SiC under argon annealing en_ZA
dc.type Postprint Article en_ZA


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