Solid state reaction and operational stability of ruthenium Schottky contact-on-6H-SiC under argon annealing
| dc.contributor.author | Munthali, Kinnock V. | |
| dc.contributor.author | Theron, C.C. (Chris) | |
| dc.contributor.author | Auret, Francois Danie | |
| dc.contributor.author | Coelho, Sergio M.M. | |
| dc.contributor.author | Njoroge, Eric Gitau | |
| dc.date.accessioned | 2016-02-12T09:30:32Z | |
| dc.date.issued | 2015-10 | |
| dc.description.abstract | Thin films of ruthenium-on-6-hexagonal silicon carbide (6H-SiC) were analysed by Rutherford backscattering spectroscopy (RBS) at various annealing temperatures. Some thin film samples were also analysed by scanning electron microscope (SEM). RBS analysis indicated minimal element diffusion, and formation of ruthenium oxide after annealing at 500 oC. Large scale diffusion of ruthenium (Ru) was observed to commence at 700 oC. The SEM images indicated that the as-deposited Ru was disorderly and amorphous. Annealing of the thin film improved the grain quality of Ru. The fabricated Ru-6H-SiC Schottky barrier diodes (SBD) with nickel ohmic contacts showed excellent rectifying behaviour and linear capacitance-voltage characteristics up to an annealing temperature of 900 oC. The SBDs degraded after annealing at 1000 oC. The degradation of the SBDs is attributed to the inter-diffusion of Ru and Si at the Schottky-substrate interface. | en_ZA |
| dc.description.embargo | 2016-10-31 | |
| dc.description.librarian | hb2015 | en_ZA |
| dc.description.uri | http://link.springer.com/journal/11664 | en_ZA |
| dc.identifier.citation | Munthali, KV, Theron, C, Auret, FD, Coelho, SMM & Njoroge, E 2015, 'Solid state reaction and operational stability of ruthenium Schottky contact-on-6H-SiC under argon annealing', Journal of Electronic Materials, vol. 44, no. 10, pp. 3265-3271. | en_ZA |
| dc.identifier.issn | 0361-5235 (print) | |
| dc.identifier.issn | 1543-186X (online) | |
| dc.identifier.other | 10.1007/s11664-015-3873-7 | |
| dc.identifier.uri | http://hdl.handle.net/2263/51342 | |
| dc.language.iso | en | en_ZA |
| dc.publisher | Springer | en_ZA |
| dc.rights | © 2015 The Minerals, Metals & Materials Society. The original publication is available at : http://link.springer.com/journal/11664. | en_ZA |
| dc.subject | Rutherford backscattering spectroscopy (RBS) | en_ZA |
| dc.subject | Scanning electron microscopy (SEM) | en_ZA |
| dc.subject | Diffusion | en_ZA |
| dc.subject | Schottky barrier diodes | en_ZA |
| dc.subject | Ruthenium | en_ZA |
| dc.subject | Ruthenium oxide | en_ZA |
| dc.subject | 6H-SiC | en_ZA |
| dc.subject | Nickel (Ni) | en_ZA |
| dc.title | Solid state reaction and operational stability of ruthenium Schottky contact-on-6H-SiC under argon annealing | en_ZA |
| dc.type | Postprint Article | en_ZA |