Silicon carbide for solar energy

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dc.contributor.author Lebedev, A.A.
dc.contributor.author Bulat, P.V.
dc.contributor.author Vladimirovich, I.E.
dc.contributor.author Kalinina, E.V.
dc.contributor.author Makarov, Y. N.
dc.date.accessioned 2015-08-25T10:11:08Z
dc.date.available 2015-08-25T10:11:08Z
dc.date.issued 2015
dc.description.abstract Paper presented to the 3rd Southern African Solar Energy Conference, South Africa, 11-13 May, 2015. en_ZA
dc.description.abstract SiC is a wide-bandgap semiconductor that possesses quite a number of interesting properties and is promising for application in power, high-temperature, and radiation hard electronics. Several areas can be distinguished in which SiC is also a promising material for solar power engineering. SiC high temperature power devices and UV detectors can be used at solar energy stations and also SiC can be used as a substrate for growth III-N materials and graphene. New results obtained at the Ioffe Institute, Nitride Crystals Co and National Research University of Information Technologies, Mechanics and Optics in all the above areas of research will be presented in the report en_ZA
dc.description.librarian cf2015 en_ZA
dc.format.extent 5 pages en_ZA
dc.format.medium PDF en_ZA
dc.identifier.citation Lebedev, A.A., Bulat, P.V., Vladimirovich, I.E., Kalinina, E.V., Makarov, Y.N. 2015, 'Silicon carbide for solar energy', Paper presented to the 3rd Southern African Solar Energy Conference, South Africa, 11-13 May, 2015. en_ZA
dc.identifier.uri http://hdl.handle.net/2263/49567
dc.language.iso en en_ZA
dc.publisher 3rd Southern African Solar Energy Conference, South Africa, 11-13 May, 2015. en_ZA
dc.rights © 2015 University of Pretoria en_ZA
dc.subject Solar energy en_ZA
dc.subject Silicon carbide en_ZA
dc.subject High temperature stability en_ZA
dc.subject Radiation resistance en_ZA
dc.subject Graphen growth en_ZA
dc.title Silicon carbide for solar energy en_ZA
dc.type Presentation en_ZA


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