Paper presented to the 3rd Southern African Solar Energy Conference, South Africa, 11-13 May, 2015.
SiC is a wide-bandgap semiconductor that possesses quite a number of interesting properties and is promising for application in power, high-temperature, and radiation hard electronics. Several areas can be distinguished in which SiC is also a promising material for solar power engineering. SiC high temperature power devices and UV detectors can be used at solar energy stations and also SiC can be used as a substrate for growth III-N materials and graphene. New results obtained at the Ioffe Institute, Nitride Crystals Co and National Research University of Information Technologies, Mechanics and Optics in all the above areas of research will be presented in the report