Temperature characteristics of hot electron electroluminescence in silicon
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Date
Authors
Du Plessis, Monuko
Wen, Hanqing
Bellotti, Enrico
Journal Title
Journal ISSN
Volume Title
Publisher
Optical Society of America
Abstract
Emission spectra of avalanching n+p junctions manufactured in a
standard CMOS technology with no process modifications were measured
over a broad photon energy spectrum ranging from 0.8 eV to 2.8 eV at
various temperatures. The temperature coefficients of the emission rates at
different photon energies were determined. Below a photon energy of
1.35 eV the temperature coefficient of emission was positive, and above
1.35 eV the temperature coefficient was negative. Two narrowband
emissions were also identified from the temperature characterization,
namely an enhanced positive temperature coefficient at 1.15 eV photon
energy, and an enhanced negative temperature coefficient at 2.0 eV. Device
simulations and Monte Carlo simulations were used to interpret the results.
Description
Keywords
Temperature, Characteristics, Hot electron, Electroluminescence, Silicon
Sustainable Development Goals
Citation
Du Plessis, M, Wen, H & Bellotti, E 2015, 'Temperature characteristics of hot electron electroluminescence in silicon', Optics Express, vol. 23, no. 10, pp. 12605-12612.