Temperature characteristics of hot electron electroluminescence in silicon

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dc.contributor.author Du Plessis, Monuko
dc.contributor.author Wen, Hanqing
dc.contributor.author Bellotti, Enrico
dc.date.accessioned 2015-07-16T06:12:09Z
dc.date.available 2015-07-16T06:12:09Z
dc.date.issued 2015-05
dc.description.abstract Emission spectra of avalanching n+p junctions manufactured in a standard CMOS technology with no process modifications were measured over a broad photon energy spectrum ranging from 0.8 eV to 2.8 eV at various temperatures. The temperature coefficients of the emission rates at different photon energies were determined. Below a photon energy of 1.35 eV the temperature coefficient of emission was positive, and above 1.35 eV the temperature coefficient was negative. Two narrowband emissions were also identified from the temperature characterization, namely an enhanced positive temperature coefficient at 1.15 eV photon energy, and an enhanced negative temperature coefficient at 2.0 eV. Device simulations and Monte Carlo simulations were used to interpret the results. en_ZA
dc.description.librarian hb2015 en_ZA
dc.description.sponsorship The work at the University of Pretoria was financially supported in part by INSiAVA (Pty) Ltd., Pretoria, South Africa. The work at Boston University was supported in part by the U.S.Army Research Laboratory through the Collaborative Research Alliance (CRA) for MultiScale multidisciplinary Modeling of Electronic materials (MSME). en_ZA
dc.description.uri https://www.osapublishing.org/oe/home.cfm en_ZA
dc.identifier.citation Du Plessis, M, Wen, H & Bellotti, E 2015, 'Temperature characteristics of hot electron electroluminescence in silicon', Optics Express, vol. 23, no. 10, pp. 12605-12612. en_ZA
dc.identifier.issn 1094-4087 (print)
dc.identifier.issn 1094-4087 (online)
dc.identifier.uri http://hdl.handle.net/2263/48931
dc.language.iso en en_ZA
dc.publisher Optical Society of America en_ZA
dc.rights © 2015 The Optical Society en_ZA
dc.subject Temperature en_ZA
dc.subject Characteristics en_ZA
dc.subject Hot electron en_ZA
dc.subject Electroluminescence en_ZA
dc.subject Silicon en_ZA
dc.title Temperature characteristics of hot electron electroluminescence in silicon en_ZA
dc.type Postprint Article en_ZA


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