Temperature characteristics of hot electron electroluminescence in silicon

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Authors

Du Plessis, Monuko
Wen, Hanqing
Bellotti, Enrico

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Publisher

Optical Society of America

Abstract

Emission spectra of avalanching n+p junctions manufactured in a standard CMOS technology with no process modifications were measured over a broad photon energy spectrum ranging from 0.8 eV to 2.8 eV at various temperatures. The temperature coefficients of the emission rates at different photon energies were determined. Below a photon energy of 1.35 eV the temperature coefficient of emission was positive, and above 1.35 eV the temperature coefficient was negative. Two narrowband emissions were also identified from the temperature characterization, namely an enhanced positive temperature coefficient at 1.15 eV photon energy, and an enhanced negative temperature coefficient at 2.0 eV. Device simulations and Monte Carlo simulations were used to interpret the results.

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Keywords

Temperature, Characteristics, Hot electron, Electroluminescence, Silicon

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Citation

Du Plessis, M, Wen, H & Bellotti, E 2015, 'Temperature characteristics of hot electron electroluminescence in silicon', Optics Express, vol. 23, no. 10, pp. 12605-12612.