Temperature characteristics of hot electron electroluminescence in silicon

Du Plessis, Monuko; Wen, Hanqing; Bellotti, Enrico

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dc.contributor.author	Du Plessis, Monuko
dc.contributor.author	Wen, Hanqing
dc.contributor.author	Bellotti, Enrico
dc.date.accessioned	2015-07-16T06:12:09Z
dc.date.available	2015-07-16T06:12:09Z
dc.date.issued	2015-05
dc.description.abstract	Emission spectra of avalanching n+p junctions manufactured in a standard CMOS technology with no process modifications were measured over a broad photon energy spectrum ranging from 0.8 eV to 2.8 eV at various temperatures. The temperature coefficients of the emission rates at different photon energies were determined. Below a photon energy of 1.35 eV the temperature coefficient of emission was positive, and above 1.35 eV the temperature coefficient was negative. Two narrowband emissions were also identified from the temperature characterization, namely an enhanced positive temperature coefficient at 1.15 eV photon energy, and an enhanced negative temperature coefficient at 2.0 eV. Device simulations and Monte Carlo simulations were used to interpret the results.	en_ZA
dc.description.librarian	hb2015	en_ZA
dc.description.sponsorship	The work at the University of Pretoria was financially supported in part by INSiAVA (Pty) Ltd., Pretoria, South Africa. The work at Boston University was supported in part by the U.S.Army Research Laboratory through the Collaborative Research Alliance (CRA) for MultiScale multidisciplinary Modeling of Electronic materials (MSME).	en_ZA
dc.description.uri	https://www.osapublishing.org/oe/home.cfm	en_ZA
dc.identifier.citation	Du Plessis, M, Wen, H & Bellotti, E 2015, 'Temperature characteristics of hot electron electroluminescence in silicon', Optics Express, vol. 23, no. 10, pp. 12605-12612.	en_ZA
dc.identifier.issn	1094-4087 (print)
dc.identifier.issn	1094-4087 (online)
dc.identifier.uri	http://hdl.handle.net/2263/48931
dc.language.iso	en	en_ZA
dc.publisher	Optical Society of America	en_ZA
dc.rights	© 2015 The Optical Society	en_ZA
dc.subject	Temperature	en_ZA
dc.subject	Characteristics	en_ZA
dc.subject	Hot electron	en_ZA
dc.subject	Electroluminescence	en_ZA
dc.subject	Silicon	en_ZA
dc.title	Temperature characteristics of hot electron electroluminescence in silicon	en_ZA
dc.type	Postprint Article	en_ZA