Abstract:
This paper reports on a new technique for sensing the Hall effect in an integrated CMOS device. Contrary totraditional Hall plates where sensor contacts comprise of highly doped, low ohmic contacts, the proposedsensor makes use of a parasitic vertical pnp bipolar junction transistor (BJT) to sense and amplify the Hallcurrent caused by the Lorentz force in the presence of a perpendicular magnetic field. The Hall effectappears as a current through the emitter of the BJT. The BJT forward gain implies a direct gain of at leastˇ + 1 in the measured signal in comparison to traditional methods.
