Observation of low-temperature annealing of a primary defect in gallium nitride

Schmidt, Matthias; Janse van Rensburg, Pieter Johan; De Meyer, Hannes; Meyer, Walter Ernst; Auret, Francois Danie

dc.contributor.author	Schmidt, Matthias
dc.contributor.author	Janse van Rensburg, Pieter Johan
dc.contributor.author	De Meyer, Hannes
dc.contributor.author	Meyer, Walter Ernst
dc.contributor.author	Auret, Francois Danie
dc.date.accessioned	2014-05-22T13:31:36Z
dc.date.available	2014-05-22T13:31:36Z
dc.date.issued	2014-04
dc.description.abstract	Primary defects were introduced into n-type gallium nitride (GaN) thin films by 1.6 MeV-proton bombardment at 20 K. The electronic states of these defects were investigated by means of optical space charge spectroscopy. An until now unreported primary defect, HP1, with an electronic state close to the valence band edge was detected. HP1 can be photo-ionised with photon energies of 3.4 eV. It was found to be stable up to 235 K but anneals quickly at temperatures above 240 K.	en_US
dc.description.librarian	hb2014	en_US
dc.description.sponsorship	National Research Foundation (NRF)	en_US
dc.description.uri	http://www.elsevier.com/locate/physb	en_US
dc.identifier.citation	Schmidt, M, Janse van Rensburg, PJ, De Meyer, H, Meyer, WE & Auret, FD 2014, 'Observation of low-temperature annealing of a primary defect in gallium nitride', Physica B : Condensed Matter, vol. 439, pp. 64-66.	en_US
dc.identifier.issn	0921-4526 (print)
dc.identifier.issn	1873-2135 (online)
dc.identifier.other	http://dx.doi.org/10.1016/j.physb.2013.11.008
dc.identifier.uri	http://hdl.handle.net/2263/39883
dc.language.iso	fr	en_US
dc.publisher	Elsevier	en_US
dc.rights	© 2013 Elsevier B.V.All rights reserved.Notice : this is the author’s version of a work that was accepted for publication in Physica B: Condensed Matter. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Physica B: Condensed Matter, vol. 439, pp. 64-66, 2014, doi : 10.1016/j.physb.2013.11.008.	en_US
dc.subject	Gallium nitride (GaN)	en_US
dc.subject	Primary defect	en_US
dc.subject	Annealing	en_US
dc.subject	Space chargespectroscopy	en_US
dc.subject	Photo-capacitance	en_US
dc.title	Observation of low-temperature annealing of a primary defect in gallium nitride	en_US
dc.type	Postprint Article	en_US