Observation of low-temperature annealing of a primary defect in gallium nitride

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dc.contributor.author Schmidt, Matthias
dc.contributor.author Janse van Rensburg, P.J. (Pieter Johan)
dc.contributor.author De Meyer, Hannes
dc.contributor.author Meyer, W.E. (Walter Ernst)
dc.contributor.author Auret, F.D. (Francois Danie)
dc.date.accessioned 2014-05-22T13:31:36Z
dc.date.available 2014-05-22T13:31:36Z
dc.date.issued 2014-04
dc.description.abstract Primary defects were introduced into n-type gallium nitride (GaN) thin films by 1.6 MeV-proton bombardment at 20 K. The electronic states of these defects were investigated by means of optical space charge spectroscopy. An until now unreported primary defect, HP1, with an electronic state close to the valence band edge was detected. HP1 can be photo-ionised with photon energies of 3.4 eV. It was found to be stable up to 235 K but anneals quickly at temperatures above 240 K. en_US
dc.description.librarian hb2014 en_US
dc.description.sponsorship National Research Foundation (NRF) en_US
dc.description.uri http://www.elsevier.com/locate/physb en_US
dc.identifier.citation Schmidt, M, Janse van Rensburg, PJ, De Meyer, H, Meyer, WE & Auret, FD 2014, 'Observation of low-temperature annealing of a primary defect in gallium nitride', Physica B : Condensed Matter, vol. 439, pp. 64-66. en_US
dc.identifier.issn 0921-4526 (print)
dc.identifier.issn 1873-2135 (online)
dc.identifier.other http://dx.doi.org/10.1016/j.physb.2013.11.008
dc.identifier.uri http://hdl.handle.net/2263/39883
dc.language.iso fr en_US
dc.publisher Elsevier en_US
dc.rights © 2013 Elsevier B.V.All rights reserved.Notice : this is the author’s version of a work that was accepted for publication in Physica B: Condensed Matter. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Physica B: Condensed Matter, vol. 439, pp. 64-66, 2014, doi : 10.1016/j.physb.2013.11.008. en_US
dc.subject Gallium nitride (GaN) en_US
dc.subject Primary defect en_US
dc.subject Annealing en_US
dc.subject Space chargespectroscopy en_US
dc.subject Photo-capacitance en_US
dc.title Observation of low-temperature annealing of a primary defect in gallium nitride en_US
dc.type Postprint Article en_US


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