Observation of low-temperature annealing of a primary defect in gallium nitride
| dc.contributor.author | Schmidt, Matthias | |
| dc.contributor.author | Janse van Rensburg, Pieter Johan | |
| dc.contributor.author | De Meyer, Hannes | |
| dc.contributor.author | Meyer, Walter Ernst | |
| dc.contributor.author | Auret, Francois Danie | |
| dc.date.accessioned | 2014-05-22T13:31:36Z | |
| dc.date.available | 2014-05-22T13:31:36Z | |
| dc.date.issued | 2014-04 | |
| dc.description.abstract | Primary defects were introduced into n-type gallium nitride (GaN) thin films by 1.6 MeV-proton bombardment at 20 K. The electronic states of these defects were investigated by means of optical space charge spectroscopy. An until now unreported primary defect, HP1, with an electronic state close to the valence band edge was detected. HP1 can be photo-ionised with photon energies of 3.4 eV. It was found to be stable up to 235 K but anneals quickly at temperatures above 240 K. | en_US |
| dc.description.librarian | hb2014 | en_US |
| dc.description.sponsorship | National Research Foundation (NRF) | en_US |
| dc.description.uri | http://www.elsevier.com/locate/physb | en_US |
| dc.identifier.citation | Schmidt, M, Janse van Rensburg, PJ, De Meyer, H, Meyer, WE & Auret, FD 2014, 'Observation of low-temperature annealing of a primary defect in gallium nitride', Physica B : Condensed Matter, vol. 439, pp. 64-66. | en_US |
| dc.identifier.issn | 0921-4526 (print) | |
| dc.identifier.issn | 1873-2135 (online) | |
| dc.identifier.other | http://dx.doi.org/10.1016/j.physb.2013.11.008 | |
| dc.identifier.uri | http://hdl.handle.net/2263/39883 | |
| dc.language.iso | fr | en_US |
| dc.publisher | Elsevier | en_US |
| dc.rights | © 2013 Elsevier B.V.All rights reserved.Notice : this is the author’s version of a work that was accepted for publication in Physica B: Condensed Matter. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Physica B: Condensed Matter, vol. 439, pp. 64-66, 2014, doi : 10.1016/j.physb.2013.11.008. | en_US |
| dc.subject | Gallium nitride (GaN) | en_US |
| dc.subject | Primary defect | en_US |
| dc.subject | Annealing | en_US |
| dc.subject | Space chargespectroscopy | en_US |
| dc.subject | Photo-capacitance | en_US |
| dc.title | Observation of low-temperature annealing of a primary defect in gallium nitride | en_US |
| dc.type | Postprint Article | en_US |