Observation of low-temperature annealing of a primary defect in gallium nitride

dc.contributor.authorSchmidt, Matthias
dc.contributor.authorJanse van Rensburg, Pieter Johan
dc.contributor.authorDe Meyer, Hannes
dc.contributor.authorMeyer, Walter Ernst
dc.contributor.authorAuret, Francois Danie
dc.date.accessioned2014-05-22T13:31:36Z
dc.date.available2014-05-22T13:31:36Z
dc.date.issued2014-04
dc.description.abstractPrimary defects were introduced into n-type gallium nitride (GaN) thin films by 1.6 MeV-proton bombardment at 20 K. The electronic states of these defects were investigated by means of optical space charge spectroscopy. An until now unreported primary defect, HP1, with an electronic state close to the valence band edge was detected. HP1 can be photo-ionised with photon energies of 3.4 eV. It was found to be stable up to 235 K but anneals quickly at temperatures above 240 K.en_US
dc.description.librarianhb2014en_US
dc.description.sponsorshipNational Research Foundation (NRF)en_US
dc.description.urihttp://www.elsevier.com/locate/physben_US
dc.identifier.citationSchmidt, M, Janse van Rensburg, PJ, De Meyer, H, Meyer, WE & Auret, FD 2014, 'Observation of low-temperature annealing of a primary defect in gallium nitride', Physica B : Condensed Matter, vol. 439, pp. 64-66.en_US
dc.identifier.issn0921-4526 (print)
dc.identifier.issn1873-2135 (online)
dc.identifier.otherhttp://dx.doi.org/10.1016/j.physb.2013.11.008
dc.identifier.urihttp://hdl.handle.net/2263/39883
dc.language.isofren_US
dc.publisherElsevieren_US
dc.rights© 2013 Elsevier B.V.All rights reserved.Notice : this is the author’s version of a work that was accepted for publication in Physica B: Condensed Matter. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Physica B: Condensed Matter, vol. 439, pp. 64-66, 2014, doi : 10.1016/j.physb.2013.11.008.en_US
dc.subjectGallium nitride (GaN)en_US
dc.subjectPrimary defecten_US
dc.subjectAnnealingen_US
dc.subjectSpace chargespectroscopyen_US
dc.subjectPhoto-capacitanceen_US
dc.titleObservation of low-temperature annealing of a primary defect in gallium nitrideen_US
dc.typePostprint Articleen_US

Files

Original bundle

Now showing 1 - 1 of 1
Loading...
Thumbnail Image
Name:
Schmidt_Observation_2014.pdf
Size:
69.99 KB
Format:
Adobe Portable Document Format
Description:
Postprint Article

License bundle

Now showing 1 - 1 of 1
Loading...
Thumbnail Image
Name:
license.txt
Size:
1.71 KB
Format:
Item-specific license agreed upon to submission
Description: