Kinetics of solid-state reactions between zirconium thin film and silicon carbide at elevated temperatures

Show simple item record

dc.contributor.author Njoroge, E.G. (Eric)
dc.contributor.author Theron, C.C. (Chris)
dc.contributor.author Malherbe, Johan B.
dc.contributor.author Ndwandwe, O.M.
dc.date.accessioned 2014-05-22T13:22:18Z
dc.date.available 2014-05-22T13:22:18Z
dc.date.issued 2014-08
dc.description.abstract Solid state reactions between a thin film (133 nm) of Zr and bulk single crystalline 6H-SiC substrates have been studied at temperatures between 600 °C and 850 °C for durations of 30, 60 and 120 min under high vacuum conditions. The deposited film and reaction zones were investigated by Rutherford backscattering spectrometry (RBS) and X-ray diffraction. The RBS spectra were simulated in order to obtain the deposited layer thickness, reaction zone compositions and reaction zone thickness. The as-deposited spectra fit well with those annealed at 600 °C, thus showing there were no reactions taking place. At temperatures of 700 °C and above, Zr reacted with the SiC substrate and formed a mixed layer of Zr carbide (ZrCx) and Zr silicides (ZrSi, Zr2Si and Zr5Si3). Annealing at 850 °C for 240 min revealed that all the deposited Zr had completely reacted. The interface reaction follows the parabolic growth law thereby indicating diffusion controlled reaction kinetics. The activation energy for the diffusion process obtained was 1.6 eV in the relatively narrow temperature range 700–850 °C. en_US
dc.description.librarian hb2014 en_US
dc.description.uri http://www.elsevier.com/locate/nimb en_US
dc.identifier.citation Njoroge, EG, Theron, CC, Malherbe, JB & Ndwandwe, OM 2014, 'Kinetics of solid-state reactions between zirconium thin film and silicon carbide at elevated temperatures', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 332, pp. 138-142. en_US
dc.identifier.issn 0168-583X (print)
dc.identifier.issn 1872-9584 (online)
dc.identifier.other 10.1016/j.nimb.2014.02.047
dc.identifier.uri http://hdl.handle.net/2263/39873
dc.language.iso en en_US
dc.publisher Elsevier en_US
dc.rights © 2014 Elsevier B.V. All rights reserved.Notice : this is the author’s version of a work that was accepted for publication in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol. 332, pp. 138-142, Aug 2014. doi : 10.1016/j.nimb.2014.02.047. en_US
dc.subject Zr en_US
dc.subject Interface en_US
dc.subject Reactions en_US
dc.subject Kinetics en_US
dc.subject Silicon carbide (SiC) en_US
dc.title Kinetics of solid-state reactions between zirconium thin film and silicon carbide at elevated temperatures en_US
dc.type Postprint Article en_US


Files in this item

This item appears in the following Collection(s)

Show simple item record