Kinetics of solid-state reactions between zirconium thin film and silicon carbide at elevated temperatures

dc.contributor.authorNjoroge, Eric Gitau
dc.contributor.authorTheron, C.C. (Chris)
dc.contributor.authorMalherbe, Johan B.
dc.contributor.authorNdwandwe, O.M.
dc.contributor.emaileric.njoroge@up.ac.zaen_US
dc.date.accessioned2014-05-22T13:22:18Z
dc.date.available2014-05-22T13:22:18Z
dc.date.issued2014-08
dc.description.abstractSolid state reactions between a thin film (133 nm) of Zr and bulk single crystalline 6H-SiC substrates have been studied at temperatures between 600 °C and 850 °C for durations of 30, 60 and 120 min under high vacuum conditions. The deposited film and reaction zones were investigated by Rutherford backscattering spectrometry (RBS) and X-ray diffraction. The RBS spectra were simulated in order to obtain the deposited layer thickness, reaction zone compositions and reaction zone thickness. The as-deposited spectra fit well with those annealed at 600 °C, thus showing there were no reactions taking place. At temperatures of 700 °C and above, Zr reacted with the SiC substrate and formed a mixed layer of Zr carbide (ZrCx) and Zr silicides (ZrSi, Zr2Si and Zr5Si3). Annealing at 850 °C for 240 min revealed that all the deposited Zr had completely reacted. The interface reaction follows the parabolic growth law thereby indicating diffusion controlled reaction kinetics. The activation energy for the diffusion process obtained was 1.6 eV in the relatively narrow temperature range 700–850 °C.en_US
dc.description.librarianhb2014en_US
dc.description.urihttp://www.elsevier.com/locate/nimben_US
dc.identifier.citationNjoroge, EG, Theron, CC, Malherbe, JB & Ndwandwe, OM 2014, 'Kinetics of solid-state reactions between zirconium thin film and silicon carbide at elevated temperatures', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 332, pp. 138-142.en_US
dc.identifier.issn0168-583X (print)
dc.identifier.issn1872-9584 (online)
dc.identifier.other10.1016/j.nimb.2014.02.047
dc.identifier.urihttp://hdl.handle.net/2263/39873
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.rights© 2014 Elsevier B.V. All rights reserved.Notice : this is the author’s version of a work that was accepted for publication in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol. 332, pp. 138-142, Aug 2014. doi : 10.1016/j.nimb.2014.02.047.en_US
dc.subjectZren_US
dc.subjectInterfaceen_US
dc.subjectReactionsen_US
dc.subjectKineticsen_US
dc.subjectSilicon carbide (SiC)en_US
dc.titleKinetics of solid-state reactions between zirconium thin film and silicon carbide at elevated temperaturesen_US
dc.typePostprint Articleen_US

Files

Original bundle

Now showing 1 - 1 of 1
Loading...
Thumbnail Image
Name:
Njoroge_Kinetics_2014.pdf
Size:
379.89 KB
Format:
Adobe Portable Document Format
Description:
Postprint Article

License bundle

Now showing 1 - 1 of 1
Loading...
Thumbnail Image
Name:
license.txt
Size:
1.71 KB
Format:
Item-specific license agreed upon to submission
Description: