Determination of the mean and the homogeneous barrier height of Cu Schottky contacts on heteroepitaxial β-Ga2O3 thin films grown by pulsed laser deposition

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dc.contributor.author Splith, Daniel
dc.contributor.author Muller, Stefan
dc.contributor.author Schmidt, Florian
dc.contributor.author Von Wenckstern, Holger
dc.contributor.author Jansen van Rensburg, Johan
dc.contributor.author Meyer, W.E. (Walter Ernst)
dc.contributor.author Grundmann, Marius
dc.date.accessioned 2014-03-07T10:13:56Z
dc.date.available 2014-03-07T10:13:56Z
dc.date.issued 2014-01
dc.description.abstract Please read abstract in the article. en
dc.description.librarian hb2014 en
dc.description.librarian ai2014
dc.description.sponsorship EFRE (SAB 100132251) and by Universität Leipzig. en
dc.description.uri http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1862-6319 en
dc.identifier.citation Splith, D, Muller, S, Schmidt, F, Von Wenckstern, H., Van Rensburg, JJ, Meyer, WE & Grundmann, M 2014, 'Determination of the mean and the homogeneous barrier height of Cu Schottky contacts on heteroepitaxial β-Ga2O3 thin films grown by pulsed laser deposition', Physica Status Solidi (A) Applications and Materials Science, vol. 211, no. 1, pp. 40-47. en
dc.identifier.issn 1862-6300 (print)
dc.identifier.issn 1862-6319 (online)
dc.identifier.other 10.1002/pssa.201330088
dc.identifier.uri http://hdl.handle.net/2263/37099
dc.language.iso en en
dc.publisher Wiley-Blackwell en
dc.rights © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. This is the pre-peer reviewed version of the following article : Physica Status Solidi A : Applications and Materials Science, vol. 211, no.1, pp. 40-47, 2014. doi : 10.1002/pssa.201330088 which has been published in final form at : http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1862-6319 en
dc.subject Gallium oxide en
dc.subject Heteroepitaxy en
dc.subject Schottky barriers en
dc.subject.lcsh Gallium compounds en
dc.subject.lcsh Thin films en
dc.subject.lcsh Pulsed laser deposition en
dc.subject.lcsh Semiconductors en
dc.title Determination of the mean and the homogeneous barrier height of Cu Schottky contacts on heteroepitaxial β-Ga2O3 thin films grown by pulsed laser deposition en
dc.type Postprint Article en


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