Please be advised that the site will be down for maintenance on Sunday, September 1, 2024, from 08:00 to 18:00, and again on Monday, September 2, 2024, from 08:00 to 09:00. We apologize for any inconvenience this may cause.
dc.contributor.author | Auret, Francois Danie![]() |
|
dc.contributor.author | Goodman, Stewart Alexander![]() |
|
dc.contributor.author | Legodi, Matshisa Johannes![]() |
|
dc.contributor.author | Meyer, Walter Ernst![]() |
|
dc.contributor.author | Look, D.C.![]() |
|
dc.date.accessioned | 2007-08-15T05:54:29Z | |
dc.date.available | 2007-08-15T05:54:29Z | |
dc.date.issued | 2002-02-25 | |
dc.description | original file name: 02.02 | en |
dc.description.abstract | Gold Schottky-barrier diodes ~SBDs! were fabricated on vapor-phase-grown single-crystal ZnO. Deep-level transient spectroscopy, using these SBDs, revealed the presence of four electron traps, the major two having levels at 0.12 eV and 0.57 below the conduction band. Comparison with temperature-dependent Hall measurements suggests that the 0.12 eV level has a temperature activated capture cross section with a capture barrier of about 0.06 eV and that it may significantly contribute to the free-carrier density. Based on the concentrations of defects other than this shallow donor, we conclude that the quality of the vapor-phase-grown ZnO studied here supercedes that of other single-crystal ZnO reported up to now. | en |
dc.format.extent | 52903 bytes | |
dc.format.mimetype | application/pdf | |
dc.identifier.citation | Auret, FD, Goodman, SA, Legodi, MJ, Meyer, WE, and Look, DC 2007, 'Electrical characterization of vapor phase grown single crystal ZnO', Appl. Phys. Lett., vol. 80, pp. 1340-1342. | en |
dc.identifier.issn | 0003-6951 | |
dc.identifier.other | 10.1063/1.1452781 | |
dc.identifier.uri | http://hdl.handle.net/2263/3292 | |
dc.language.iso | en_US | en |
dc.publisher | American Institute of Physics | en |
dc.rights | American Institute of Physics | en |
dc.subject | DLTS (Spectroscopy) | en |
dc.subject | Schottky-barrier diodes | en |
dc.subject.lcsh | Deep level transient spectroscopy | |
dc.subject.lcsh | Diodes, Schottky-barrier | |
dc.subject.lcsh | Diodes, Semiconductor | |
dc.title | Electrical characterization of vapor-phase-grown single-crystal ZnO | en |
dc.type | Article | en |