Electrical characterization of vapor-phase-grown single-crystal ZnO

Auret, Francois Danie; Goodman, Stewart Alexander; Legodi, Matshisa Johannes; Meyer, Walter Ernst; Look, D.C.

Please be advised that the site will be down for maintenance on Sunday, September 1, 2024, from 08:00 to 18:00, and again on Monday, September 2, 2024, from 08:00 to 09:00. We apologize for any inconvenience this may cause.

Show simple item record

dc.contributor.author	Auret, Francois Danie
dc.contributor.author	Goodman, Stewart Alexander
dc.contributor.author	Legodi, Matshisa Johannes
dc.contributor.author	Meyer, Walter Ernst
dc.contributor.author	Look, D.C.
dc.date.accessioned	2007-08-15T05:54:29Z
dc.date.available	2007-08-15T05:54:29Z
dc.date.issued	2002-02-25
dc.description	original file name: 02.02	en
dc.description.abstract	Gold Schottky-barrier diodes ~SBDs! were fabricated on vapor-phase-grown single-crystal ZnO. Deep-level transient spectroscopy, using these SBDs, revealed the presence of four electron traps, the major two having levels at 0.12 eV and 0.57 below the conduction band. Comparison with temperature-dependent Hall measurements suggests that the 0.12 eV level has a temperature activated capture cross section with a capture barrier of about 0.06 eV and that it may significantly contribute to the free-carrier density. Based on the concentrations of defects other than this shallow donor, we conclude that the quality of the vapor-phase-grown ZnO studied here supercedes that of other single-crystal ZnO reported up to now.	en
dc.format.extent	52903 bytes
dc.format.mimetype	application/pdf
dc.identifier.citation	Auret, FD, Goodman, SA, Legodi, MJ, Meyer, WE, and Look, DC 2007, 'Electrical characterization of vapor phase grown single crystal ZnO', Appl. Phys. Lett., vol. 80, pp. 1340-1342.	en
dc.identifier.issn	0003-6951
dc.identifier.other	10.1063/1.1452781
dc.identifier.uri	http://hdl.handle.net/2263/3292
dc.language.iso	en_US	en
dc.publisher	American Institute of Physics	en
dc.rights	American Institute of Physics	en
dc.subject	DLTS (Spectroscopy)	en
dc.subject	Schottky-barrier diodes	en
dc.subject.lcsh	Deep level transient spectroscopy
dc.subject.lcsh	Diodes, Schottky-barrier
dc.subject.lcsh	Diodes, Semiconductor
dc.title	Electrical characterization of vapor-phase-grown single-crystal ZnO	en
dc.type	Article	en