Electrical characterization of vapor-phase-grown single-crystal ZnO

dc.contributor.authorAuret, Francois Danie
dc.contributor.authorGoodman, Stewart Alexander
dc.contributor.authorLegodi, Matshisa Johannes
dc.contributor.authorMeyer, Walter Ernst
dc.contributor.authorLook, D.C.
dc.date.accessioned2007-08-15T05:54:29Z
dc.date.available2007-08-15T05:54:29Z
dc.date.issued2002-02-25
dc.descriptionoriginal file name: 02.02en
dc.description.abstractGold Schottky-barrier diodes ~SBDs! were fabricated on vapor-phase-grown single-crystal ZnO. Deep-level transient spectroscopy, using these SBDs, revealed the presence of four electron traps, the major two having levels at 0.12 eV and 0.57 below the conduction band. Comparison with temperature-dependent Hall measurements suggests that the 0.12 eV level has a temperature activated capture cross section with a capture barrier of about 0.06 eV and that it may significantly contribute to the free-carrier density. Based on the concentrations of defects other than this shallow donor, we conclude that the quality of the vapor-phase-grown ZnO studied here supercedes that of other single-crystal ZnO reported up to now.en
dc.format.extent52903 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationAuret, FD, Goodman, SA, Legodi, MJ, Meyer, WE, and Look, DC 2007, 'Electrical characterization of vapor phase grown single crystal ZnO', Appl. Phys. Lett., vol. 80, pp. 1340-1342.en
dc.identifier.issn0003-6951
dc.identifier.other10.1063/1.1452781
dc.identifier.urihttp://hdl.handle.net/2263/3292
dc.language.isoen_USen
dc.publisherAmerican Institute of Physicsen
dc.rightsAmerican Institute of Physicsen
dc.subjectDLTS (Spectroscopy)en
dc.subjectSchottky-barrier diodesen
dc.subject.lcshDeep level transient spectroscopy
dc.subject.lcshDiodes, Schottky-barrier
dc.subject.lcshDiodes, Semiconductor
dc.titleElectrical characterization of vapor-phase-grown single-crystal ZnOen
dc.typeArticleen

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