Electrical characterization of defects in heavy-ion implanted n-type Ge

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dc.contributor.author Auret, Francois Danie
dc.contributor.author Janse van Rensburg, Pieter Johan
dc.contributor.author Hayes, M.
dc.contributor.author Nel, Jacqueline Margot
dc.contributor.author Coelho, Sergio M.M.
dc.contributor.author Meyer, Walter Ernst
dc.contributor.author Decoster, S.
dc.contributor.author Matias, V.S.
dc.contributor.author Vantomme, A.
dc.contributor.author Smeets, D.
dc.date.accessioned 2007-07-16T06:10:58Z
dc.date.available 2007-07-16T06:10:58Z
dc.date.issued 2007-04
dc.description.abstract Please open article to read abstract en
dc.description.sponsorship The authors gratefully acknowledge financial support of the South African National Research Foundation, the Fund for Scientific Research, Flanders (FWO), IUAP P5/10 and the KULeuven Research Council (GOA/2004/02 and INPAC EF/05/005). en
dc.format.extent 146462 bytes
dc.format.mimetype application/pdf
dc.identifier.citation Auret, FD, Janse van Rensburg, PJ, Hayes, M, Nel, JM, Coelho, S, Meyer, WE, Decoster, S, Matias, V, Vantomme, A & Smeets, D 2007, ‘Electrical characterization of defects in heavy-ion implanted n-type Ge’, Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms, vol.257, issues 1-2, pp. 169-171.[http://www.sciencedirect.com/science/journal/0168583X] en
dc.identifier.issn 0168-583X
dc.identifier.other 10.1016/j.nimb.2007.01.107
dc.identifier.uri http://hdl.handle.net/2263/3017
dc.language.iso en en
dc.publisher Elsevier en
dc.rights Elsevier en
dc.subject Implantation en
dc.subject Electronic defects en
dc.subject.lcsh Germanium -- Defects
dc.subject.lcsh Ion implantation
dc.subject.lcsh Heavy ions
dc.subject.lcsh Deep level transient spectroscopy
dc.title Electrical characterization of defects in heavy-ion implanted n-type Ge en
dc.type Postprint Article en


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