Electrical characterization of defects in heavy-ion implanted n-type Ge
| dc.contributor.author | Auret, Francois Danie | |
| dc.contributor.author | Janse van Rensburg, Pieter Johan | |
| dc.contributor.author | Hayes, M. | |
| dc.contributor.author | Nel, Jacqueline Margot | |
| dc.contributor.author | Coelho, Sergio M.M. | |
| dc.contributor.author | Meyer, Walter Ernst | |
| dc.contributor.author | Decoster, S. | |
| dc.contributor.author | Matias, V.S. | |
| dc.contributor.author | Vantomme, A. | |
| dc.contributor.author | Smeets, D. | |
| dc.date.accessioned | 2007-07-16T06:10:58Z | |
| dc.date.available | 2007-07-16T06:10:58Z | |
| dc.date.issued | 2007-04 | |
| dc.description.abstract | Please open article to read abstract | en |
| dc.description.sponsorship | The authors gratefully acknowledge financial support of the South African National Research Foundation, the Fund for Scientific Research, Flanders (FWO), IUAP P5/10 and the KULeuven Research Council (GOA/2004/02 and INPAC EF/05/005). | en |
| dc.format.extent | 146462 bytes | |
| dc.format.mimetype | application/pdf | |
| dc.identifier.citation | Auret, FD, Janse van Rensburg, PJ, Hayes, M, Nel, JM, Coelho, S, Meyer, WE, Decoster, S, Matias, V, Vantomme, A & Smeets, D 2007, ‘Electrical characterization of defects in heavy-ion implanted n-type Ge’, Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms, vol.257, issues 1-2, pp. 169-171.[http://www.sciencedirect.com/science/journal/0168583X] | en |
| dc.identifier.issn | 0168-583X | |
| dc.identifier.other | 10.1016/j.nimb.2007.01.107 | |
| dc.identifier.uri | http://hdl.handle.net/2263/3017 | |
| dc.language.iso | en | en |
| dc.publisher | Elsevier | en |
| dc.rights | Elsevier | en |
| dc.subject | Implantation | en |
| dc.subject | Electronic defects | en |
| dc.subject.lcsh | Germanium -- Defects | |
| dc.subject.lcsh | Ion implantation | |
| dc.subject.lcsh | Heavy ions | |
| dc.subject.lcsh | Deep level transient spectroscopy | |
| dc.title | Electrical characterization of defects in heavy-ion implanted n-type Ge | en |
| dc.type | Postprint Article | en |