Inductively coupled plasma induced deep levels in epitaxial n-GaAs

Venter, Andre; Nyamhere, Cloud; Botha, J.R.; Auret, Francois Danie; Janse van Rensburg, Pieter Johan; Meyer, Walter Ernst; Coelho, Sergio M.M.; Kolkovsky, V.I.

dc.contributor.author	Venter, Andre
dc.contributor.author	Nyamhere, Cloud
dc.contributor.author	Botha, J.R.
dc.contributor.author	Auret, Francois Danie
dc.contributor.author	Janse van Rensburg, Pieter Johan
dc.contributor.author	Meyer, Walter Ernst
dc.contributor.author	Coelho, Sergio M.M.
dc.contributor.author	Kolkovsky, V.I.
dc.date.accessioned	2012-05-28T06:36:19Z
dc.date.available	2012-05-28T06:36:19Z
dc.date.issued	2012-05
dc.description.abstract	The electronic properties of defects introduced by low energy inductively coupled Ar plasma etching of n-type (Sidoped)GaAs were investigated by deep level transient spectroscopy (DLTS) and Laplace DLTS. Several prominent electron traps (Ec—0.046 eV, Ec—0.186 eV, Ec—0.314 eV. Ec—0.528 eV and Ec—0.605 eV) were detected.The metastable defect Ec—0.046eV having a trap signature similar to E1 is observed for the first time. Ec—0.314eV and Ec—0.605 eV are metastable and appear to be similar to the M3 and M4 defects present in dc H-plasma exposed GaAs.	en
dc.description.librarian	nf2012	en
dc.description.sponsorship	South African National Research Foundation	en_US
dc.description.uri	http://www.elsevier.com/locate/physb	en_US
dc.identifier.citation	F.D. Auret, P.J. Janse van Rensburg, W.E. Meyer, S.M.M. Coelho, Vl. Kolkovsky & J.R. Botha, 'Inductively coupled plasma induced deep levels in epitaxial n-GaAs, Physica B, vol. 407, no. 10, pp. 1497-1500 (2012), doi:10.1016/j.physb.2011.09.070	en
dc.identifier.issn	0921- 4526 (print)
dc.identifier.issn	1873-2135 (online)
dc.identifier.other	10.1016/j.physb.2011.09.070
dc.identifier.uri	http://hdl.handle.net/2263/18923
dc.language.iso	en	en_US
dc.publisher	Elsevier	en_US
dc.rights	© 2011 Elsevier. All rights reserved.	en_US
dc.subject	GaAs	en
dc.subject	Activation energy	en
dc.subject	Metastability	en
dc.subject	Inductively coupled Ar plasma etching (ICP)	en
dc.subject.lcsh	Deep level transient spectroscopy	en
dc.title	Inductively coupled plasma induced deep levels in epitaxial n-GaAs	en
dc.type	Postprint Article	en