Diffusion behaviour of cesium in silicon carbide at T > 1000 °C
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Date
Authors
Friedland, Erich Karl Helmuth
Van der Berg, Nic (Nicolaas George)
Hlatshwayo, Thulani Thokozani
Kuhudzai, Remeredzai Joseph
Malherbe, Johan B.
Wendler, E.
Journal Title
Journal ISSN
Volume Title
Publisher
Elsevier
Abstract
Diffusion behaviour of ion implanted cesium into 6H-SiC and CVD-SiC wafers is investigated
by Rutherford backscattering spectrometry (RBS) combined with α-particle channelling
and scanning electron microscopy (SEM). Implantations were done at room temperature,
350 °C and 600 °C. A strong temperature dependence of irradiation induced diffusion is observed.
Transport mechanisms were studied by isochronal and isothermal annealing methods
up to temperatures of 1500 °C. Cesium transport in irradiation damaged SiC is governed by
an impurity trapping mechanism of defect structures and is similar in single and polycrystalline
SiC.
Description
Keywords
Isochronal and isothermal annealing
Sustainable Development Goals
Citation
Friedland, E et al., Diffusion behaviour of cesium in silicon carbide, Nuclear Instruments & Methods in Physics Research Section B : Beam Interactions with Materials and Atoms. (2012), doi:10.1016/j.nimb.2011.11.048