dc.contributor.author |
Friedland, Erich Karl Helmuth
|
|
dc.contributor.author |
Van der Berg, Nic (Nicolaas George)
|
|
dc.contributor.author |
Hlatshwayo, Thulani Thokozani
|
|
dc.contributor.author |
Kuhudzai, Remeredzai Joseph
|
|
dc.contributor.author |
Malherbe, Johan B.
|
|
dc.contributor.author |
Wendler, E.
|
|
dc.date.accessioned |
2012-01-24T06:28:50Z |
|
dc.date.available |
2012-01-24T06:28:50Z |
|
dc.date.issued |
2012 |
|
dc.description.abstract |
Diffusion behaviour of ion implanted cesium into 6H-SiC and CVD-SiC wafers is investigated
by Rutherford backscattering spectrometry (RBS) combined with α-particle channelling
and scanning electron microscopy (SEM). Implantations were done at room temperature,
350 °C and 600 °C. A strong temperature dependence of irradiation induced diffusion is observed.
Transport mechanisms were studied by isochronal and isothermal annealing methods
up to temperatures of 1500 °C. Cesium transport in irradiation damaged SiC is governed by
an impurity trapping mechanism of defect structures and is similar in single and polycrystalline
SiC. |
en |
dc.description.librarian |
nf2012 |
en |
dc.description.sponsorship |
National Research Foundation and the Bundesministerium für Bildung
und Forschung. |
en_US |
dc.description.uri |
http://www.sciencedirect.com/science/journal/0168583X |
en_US |
dc.identifier.citation |
Friedland, E et al., Diffusion behaviour of cesium in silicon carbide, Nuclear Instruments & Methods in Physics Research Section B : Beam Interactions with Materials and Atoms. (2012), doi:10.1016/j.nimb.2011.11.048 |
en |
dc.identifier.issn |
0168-583X (print) |
|
dc.identifier.issn |
1872-9584 (online) |
|
dc.identifier.other |
10.1016/j.nimb.2011.11.048 |
|
dc.identifier.uri |
http://hdl.handle.net/2263/17877 |
|
dc.language.iso |
en |
en_US |
dc.publisher |
Elsevier |
en_US |
dc.rights |
© 2012 Published by Elsevier B.V. |
en |
dc.subject |
Isochronal and isothermal annealing |
en |
dc.subject.lcsh |
Diffusion |
en |
dc.subject.lcsh |
Cesium -- Diffusion rate |
en |
dc.subject.lcsh |
Silicon carbide |
en |
dc.subject.lcsh |
Ion implantation |
en |
dc.title |
Diffusion behaviour of cesium in silicon carbide at T > 1000 °C |
en |
dc.type |
Postprint Article |
en |