Diffusion behaviour of cesium in silicon carbide at T > 1000 °C

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Friedland, Erich Karl Helmuth
Van der Berg, Nic (Nicolaas George)
Hlatshwayo, Thulani Thokozani
Kuhudzai, Remeredzai Joseph
Malherbe, Johan B.
Wendler, E.

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Elsevier

Abstract

Diffusion behaviour of ion implanted cesium into 6H-SiC and CVD-SiC wafers is investigated by Rutherford backscattering spectrometry (RBS) combined with α-particle channelling and scanning electron microscopy (SEM). Implantations were done at room temperature, 350 °C and 600 °C. A strong temperature dependence of irradiation induced diffusion is observed. Transport mechanisms were studied by isochronal and isothermal annealing methods up to temperatures of 1500 °C. Cesium transport in irradiation damaged SiC is governed by an impurity trapping mechanism of defect structures and is similar in single and polycrystalline SiC.

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Isochronal and isothermal annealing

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Friedland, E et al., Diffusion behaviour of cesium in silicon carbide, Nuclear Instruments & Methods in Physics Research Section B : Beam Interactions with Materials and Atoms. (2012), doi:10.1016/j.nimb.2011.11.048