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Showing 10 out of a total of 19 results for collection: Research Articles (Physics).
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Electronic and annealing properties of the E0.31 defect introduced during Ar plasma etching of germanium
Auret, Francois Danie
;
Coelho, Sergio M.M.
;
Myburg, G.
;
Janse van Rensburg, Pieter Johan
;
Meyer, Walter Ernst
(
Elsevier
,
2009
)
Electrical characterization of vapor-phase-grown single-crystal ZnO
Auret, Francois Danie
;
Goodman, Stewart Alexander
;
Legodi, Matshisa Johannes
;
Meyer, Walter Ernst
;
Look, D.C.
(
American Institute of Physics
,
2002-02-25
)
Electrical characterization of rare-earth implanted GaN
Janse van Rensburg, Pieter Johan
;
Auret, Francois Danie
;
Matias, V.S.
;
Vantomme, A.
(
Elsevier
,
2009
)
Electrical characterisation of ruthenium Schottky contacts on n-Ge (1 0 0)
Chawanda, Albert
;
Nyamhere, Cloud
;
Auret, Francois Danie
;
Nel, Jacqueline Margot
;
Mtangi, Wilbert
;
Diale, M. (Mmantsae Moche)
(
Elsevier
,
2012-05
)
Characterization of defects introduced in Sb doped Ge by 3keV Ar sputtering using deep level transient spectroscopy (DLTS) and Laplace-DLTS (LDLTS)
Nyamhere, Cloud
;
Das, A.G.M.
;
Auret, Francois Danie
;
Chawanda, Albert
;
Mtangi, Wilbert
;
Odendaal, R.Q. (Quintin)
;
Carr, Alan
(
Elsevier
,
2009
)
Electronic properties of defects in pulsed-laser deposition grown ZnO with levels at 300 and 370 meV below the conduction band
Auret, Francois Danie
;
Meyer, Walter Ernst
;
Janse van Rensburg, Pieter Johan
;
Hayes, M.
;
Nel, Jacqueline Margot
;
Von Wenckstern, Holger
;
Schmidt, H.
;
Biehne, G.
;
Hochmuth, H.
;
Lorenz, M.
;
Grundmann, Marius
(
Elsevier
,
2007-12
)
Comparative study of the electrical properties of Pd/ZnO Schottky contacts fabricated using electron beam deposition and resistive/thermal evaporation techniques
Mtangi, Wilbert
;
Auret, Francois Danie
;
Janse van Rensburg, Pieter Johan
;
Coelho, Sergio M.M.
;
Legodi, Matshisa Johannes
;
Meyer, Walter Ernst
;
Chawanda, Albert
(
American Institute of Physics
,
2011-11
)
Thermal stability of Co, Ni, Pt or Ru Schottky contacts on n-Si and defects introduced thereon during contacts fabrication using electron beam deposition
Nyamhere, Cloud
;
Chawanda, Albert
;
Das, A.G.M.
;
Auret, Francois Danie
;
Hayes, M.
(
Elsevier
,
2007-12-15
)
The dependence of barrier height on temperature for Pd Schottky contacts on ZnO
Mtangi, Wilbert
;
Auret, Francois Danie
;
Nyamhere, Cloud
;
Janse van Rensburg, Pieter Johan
;
Chawanda, Albert
;
Diale, M. (Mmantsae Moche)
;
Nel, Jacqueline Margot
;
Meyer, Walter Ernst
(
Elsevier
,
2009
)
Defect production in strained p-type Si1-xGex by Er implantation
Mamor, M.
;
Pipeleers, B.
;
Auret, Francois Danie
;
Vantomme, M.
(
American Institute of Physics
,
2011-01
)
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Auret, Francois Danie (19)
Janse van Rensburg, Pieter Johan (11)
Meyer, Walter Ernst (10)
Coelho, Sergio M.M. (7)
Nyamhere, Cloud (7)
Chawanda, Albert (6)
Mtangi, Wilbert (6)
Nel, Jacqueline Margot (5)
Das, A.G.M. (3)
Diale, M. (Mmantsae Moche) (3)
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Subject
Deep level transient spectroscopy (19)
Defects (7)
DLTS (5)
Electron beams (5)
Annealing (4)
Diodes, Schottky-barrier (4)
Germanium (4)
Electron beam deposition (3)
Germanium -- Defects (3)
Laplace DLTS (3)
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2010 - 2012 (7)
2002 - 2009 (12)
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