Solid-state compound phase formation of TiSi2 thin films under stress

Theron, C.C. (Chris); Mokoena, N.; Ndwandwe, O.M.

dc.contributor.author	Theron, C.C. (Chris)
dc.contributor.author	Mokoena, N.
dc.contributor.author	Ndwandwe, O.M.
dc.date.accessioned	2010-01-25T06:47:30Z
dc.date.available	2010-01-25T06:47:30Z
dc.date.issued	2009-11
dc.description.abstract	Different stress situations were created on an Si(100) wafer by depositing either Si3N4 or SiO2 thin films on the back side. Si3N4 has a different thermal expansion coefficient from that of SiO2. A thin Ti film was then deposited on the front side of the Si wafer. The structures were then annealed at various high temperatures for different periods of time. Real-time Rutherford backscattering spectrometry, as well as sample curvature measurements, were used to characterise the samples. Different reaction rates were found between Si3N4-deposited samples and SiO2-deposited samples.	en
dc.identifier.citation	Theron, C, Mokoena, N & Ndwandwe, OM 2009, 'Solid-state compound phase formation of TiSi2 thin films under stress', South African Journal of Science, vol. 105, no. 11, pp. 440-444. [http://www.sajs.co.za/]	en
dc.identifier.issn	0038-2353
dc.identifier.uri	http://hdl.handle.net/2263/12721
dc.language.iso	en	en
dc.publisher	Academy of Science of South Africa	en
dc.rights	Academy of Science of South Africa	en
dc.subject	Stress	en
dc.subject	Real-time Rutherford backscattering spectrometry	en
dc.subject	Phase formation	en
dc.subject	TiSi2	en
dc.subject.lcsh	Thin films	en
dc.subject.lcsh	Diffusion	en
dc.subject.lcsh	Solid state chemistry	en
dc.title	Solid-state compound phase formation of TiSi2 thin films under stress	en
dc.type	Article	en