Munthali, Kinnock V.; Theron, C.C. (Chris); Auret, Francois Danie; Coelho, Sergio M.M.; Prinsloo, Linda Charlotta; Njoroge, Eric Gitau
(Springer, 2014-12)
Thin films and Schottky diodes dots of ruthenium (Ru) on bulk-grown n-type-6-hexagonal-silicon carbide (6H-SiC) were annealed isochronally in a vacuum furnace at temperatures ranging from 500–1,000 °C. Rutherford backscattering ...