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Electrical characterization of deep levels created by bombarding nitrogen-doped 4HSiC with alpha-particle irradiation
Omotoso, Ezekiel
;
Meyer, Walter Ernst
;
Auret, Francois Danie
;
Paradzah, Alexander Tapera
;
Legodi, Matshisa Johannes
(
Elsevier
,
2016-03
)
Chemical and electrical characteristics of annealed Ni/Au and Ni/Ir/Au contacts on AlGaN
Ngoepe, Phuti Ngako Mahloka
;
Meyer, Walter Ernst
;
Auret, Francois Danie
;
Omotoso, Ezekiel
;
Diale, M. (Mmantsae Moche)
;
Swart, H.C.
;
Duvenhage, M.M.
;
Coetsee, E.
(
Elsevier
,
2016-01
)
Optoelectronic characterization of Au/Ni/n-AIGaN photodiodes after annealing at different temperatures
Ngoepe, Phuti Ngako Mahloka
;
Meyer, Walter Ernst
;
Diale, M. (Mmantsae Moche)
;
Auret, Francois Danie
;
Van Schalkwyk, Louwrens
(
Elsevier
,
2012-06
)
Observation of low-temperature annealing of a primary defect in gallium nitride
Schmidt, Matthias
;
Janse van Rensburg, Pieter Johan
;
De Meyer, Hannes
;
Meyer, Walter Ernst
;
Auret, Francois Danie
(
Elsevier
,
2014-04
)
Optical and electrical characterization of AlGaN based Schottky photodiodes after annealing at different temperatures
Ngoepe, Phuti Ngako Mahloka
;
Meyer, Walter Ernst
;
Diale, M. (Mmantsae Moche)
;
Auret, Francois Danie
;
Van Schalkwyk, Louwrens
(
Elsevier
,
2014-04
)
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Auret, Francois Danie (6)
Meyer, Walter Ernst (6)
Diale, M. (Mmantsae Moche) (4)
Ngoepe, Phuti Ngako Mahloka (4)
Omotoso, Ezekiel (3)
Van Schalkwyk, Louwrens (2)
Coelho, Sergio M.M. (1)
Coetsee, E. (1)
De Meyer, Hannes (1)
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Annealing (6)
AlGaN (3)
4H-SiC (2)
Deep-level transient spectroscopy (DLTS) (2)
Schottky photodiode (2)
Alpha-particle irradiation (1)
Defects (1)
Electron beam deposition (EBD) (1)
Gallium nitride (GaN) (1)
Laplace-DLTS (1)
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