Theron, C.C. (Chris); Mokoena, N.; Ndwandwe, O.M.
(Academy of Science of South Africa, 2009-11)
Different stress situations were created on an Si(100) wafer by depositing either Si3N4 or SiO2 thin films on the back side. Si3N4 has a different thermal expansion coefficient from that of SiO2. A thin Ti film was then ...