Danga, Helga Tariro; Auret, Francois Danie; Coelho, Sergio M.M.; Diale, M. (Mmantsae Moche)
(Elsevier, 2016-01)
The defects introduced in epitaxially grown p-type silicon (Si) during electron beam exposure were electrically characterised using deep level transient spectroscopy (DLTS) and high resolution Laplace-DLTS. In this process, ...