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Browsing Physics by Author "Venter, Andre"
Now showing items 1-7 of 7
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Venter, Andre; Nyamhere, Cloud; Botha, J.R.; Auret, Francois Danie; Janse van Rensburg, J.P.; Meyer, Walter Ernst; Coelho, Sergio M.M.; Kolkovsky, V.I. (American Institute of Physics, 2012-03-08)Ar plasma etching of n-type (Si doped) GaAs introduces several electron traps (Ec - 0.04 eV, Ec - 0.07 eV, Ec - 0.19 eV, Ec - 0.31 eV, Ec - 0.53 eV, and Ec - 0.61 eV). The trap, Ec - 0.04 eV, labelled E10 and having a ...
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Nyamhereme, C.; Venter, Andre; Auret, Francois Danie; Coelho, Sergio M.M.; Murape, D.M. (American Institute of Physics, 2012-02-29)Bulk antimony (Sb) doped germanium (n-Ge) samples with doping concentrations ranging between 7.0 1014 cm 3 and 2.5 1015 cm 3 were exposed to a dc-hydrogen or helium plasma. Hydrogen exposure resulted in the introduction ...
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Nyamhere, Cloud; Venter, Andre; Murape, D.M.; Auret, Francois Danie; Coelho, Sergio M.M.; Botha, J.R. (Elsevier, 2012-08)Bulk antimony doped germanium (n-Ge) has been exposed to a dc-hydrogen plasma. Capacitance-voltage depth profiles revealed extensive near surface passivation of the shallow donors as evidenced by ˜ a 1.5 orders of magnitude ...
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Nyamhere, Cloud; Das, A.G.M.; Auret, Francois Danie; Chawanda, Albert; Pineda-Vargas, C.A.; Venter, Andre (Elsevier, 2011-08)Please read the abstract in the article.
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Venter, Andre; Nyamhere, Cloud; Botha, J.R.; Auret, Francois Danie; Coelho, Sergio M.M.; Meyer, Walter Ernst (American Institute of Physics, 2012-05-01)Inductively coupled Ar plasma etching of n-type (Si doped) Gallium Arsenide (GaAs) introduces several electron traps, Ec – 0.04 eV (labelled E10), Ec – 0.19 eV, Ec – 0.31 eV, Ec – 0.53 eV, and Ec – 0.61 eV (behaving like ...
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Venter, Andre; Nyamhere, Cloud; Botha, J.R.; Auret, Francois Danie; Janse van Rensburg, Pieter Johan; Meyer, Walter Ernst; Coelho, Sergio M.M.; Kolkovsky, V.I. (Elsevier, 2012-05)The electronic properties of defects introduced by low energy inductively coupled Ar plasma etching of n-type (Sidoped)GaAs were investigated by deep level transient spectroscopy (DLTS) and Laplace DLTS. Several prominent ...
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Venter, Andre; Murape, D.M.; Botha, J.R.; Auret, Francois Danie (Elsevier, 2015-01)Please read abstract in the article.
Now showing items 1-7 of 7