Browsing Physics by Author "Vantomme, A."

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Electrical characterization of defects in heavy-ion implanted n-type Ge

Auret, Francois Danie; Janse van Rensburg, Pieter Johan; Hayes, M.; Nel, Jacqueline Margot; Coelho, Sergio M.M.; Meyer, Walter Ernst; Decoster, S.; Matias, V.S.; Vantomme, A.; Smeets, D. (Elsevier, 2007-04)

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Electrical characterization of metastable defects introduced in GaN by eu-ion implantation

Auret, Francois Danie; Meyer, Walter Ernst; Diale, M. (Mmantsae Moche); Janse van Rensburg, Pieter Johan; Song, S.F.; Temst, K.; Vantomme, A. (Trans Tech, 2011-03)

Gallium nitride (GaN), grown by HVPE, was implanted with 300 keV Eu ions and then annealed at 1000 oC . Deep level transient spectroscopy (DLTS) and Laplace DLTS (L-DLTS) were used to characterise the ion implantation ...
Electrical characterization of rare-earth implanted GaN

Janse van Rensburg, Pieter Johan; Auret, Francois Danie; Matias, V.S.; Vantomme, A. (Elsevier, 2009)

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