Venter, Andre; Nyamhere, Cloud; Botha, J.R.; Auret, Francois Danie; Janse van Rensburg, J.P.; Meyer, Walter Ernst; Coelho, Sergio M.M.; Kolkovsky, V.I.
(American Institute of Physics, 2012-03-08)
Ar plasma etching of n-type (Si doped) GaAs introduces several electron traps (Ec - 0.04 eV,
Ec - 0.07 eV, Ec - 0.19 eV, Ec - 0.31 eV, Ec - 0.53 eV, and Ec - 0.61 eV). The trap, Ec - 0.04 eV,
labelled E10 and having a ...