Postprints (Articles)
Permanent URI for this collectionhttp://hdl.handle.net/2263/51908
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Item Defect engineering with group III dopants in 2D monolayer SiC for improved electronic devicesIgumbor, Emmanuel; Ajeh, Patience; Mapasha, Refilwe Edwin; Omotoso, Ezekiel; Raji, Abdulrafiu (Elsevier, 2026-06)Please read abstract in the article. HIGHLIGHTS • Hybrid DFT was used to study the effects of group III dopants on 2D SiC.. • Group III dopant in 2D monolayer SiC distorts its lattice, inducing varying strain. • Group III dopants at C sites induce magnetism, enabling spintronic 2D SiC devices. • This study reveals how group III dopants tune electronic and magnetic properties of 2D SiC.Item MnSe supported on carbon foam prepared by salt template method as advanced host cathode for lithium-sulfur batteryZhang, Xuefeng; Lv, Qian; Liu, Hui; Guo, Aifang; Ren, Jianwei; Mo, Zaiyong; Huang, Zhenlong; Wang, Hui (Springer, 2026-03)Please read abstract in the article.