Browsing by UP Author "Wendler, E."

Browsing by UP Author "Wendler, E."

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  • Damage formation and optical absorption in neutron irradiated SiC 
    Wendler, E.; Bierschenk, Th.; Felgentrager, F.; Sommerfeld, J.; Wesch, W.; Alber, D.; Bukalis, G.; Prinsloo, Linda Charlotta; Van der Berg, Nic (Nicolaas George); Friedland, Erich Karl Helmuth; Malherbe, Johan B. (Elsevier, 2012-09)
    The defect formation in neutron irradiated SiC was investigated by means of Rutherford backscattering spectrometry in channelling mode (RBS), optical absorption and Raman spectroscopy. The relative defect concentration ...
  • Damage formation in Ge during Ar+ and He+ implantation at 15 K 
    Hayes, M.; Schroeter, A.; Wendler, E.; Wesch, W.; Auret, Francois Danie; Nel, Jacqueline Margot (Elsevier, 2009)
    Read abstract in article.
  • Diffusion behaviour of cesium in silicon carbide at T > 1000 °C 
    Friedland, Erich Karl Helmuth; Van der Berg, Nic (Nicolaas George); Hlatshwayo, Thulani Thokozani; Kuhudzai, Remeredzai Joseph; Malherbe, Johan B.; Wendler, E. (Elsevier, 2012)
    Diffusion behaviour of ion implanted cesium into 6H-SiC and CVD-SiC wafers is investigated by Rutherford backscattering spectrometry (RBS) combined with α-particle channelling and scanning electron microscopy (SEM). ...
  • Heat treatment of glassy carbon implanted with cesium at room and high temperatures 
    Langa, Dolly Frans; Van der Berg, Nic (Nicolaas George); Friedland, Erich Karl Helmuth; Malherbe, Johan B.; Botha, A.J.; Chakraborty, P.; Wendler, E.; Wesch, W. (Elsevier, 2012-02-15)
    The effect of annealing temperature on the surface morphology and on the diffusion of cesium ions implanted into glassy carbon (Sigradur® G) is reported. The samples were implanted with 360 keV cesium ions to a fluence of ...
  • Investigation of silver and iodine transport through silicon carbide layers prepared for nuclear fuel element cladding 
    Friedland, Erich Karl Helmuth; Van der Berg, Nic (Nicolaas George); Malherbe, Johan B.; Hancke, J.J. (Jacobus Johannes); Barry, J.; Wendler, E.; Wesch, W. (Elsevier, 2011-03)
    Please read abstract in article.
  • Radiation damage in ZnO ion implanted at 15 K 
    Wendler, E.; Bilani, O.; Gartner, K.; Wesch, W.; Hayes, M.; Auret, Francois Danie; Lorenz, K.; Alves, E. (Elsevier, 2009)
    Commercial O-face (0 0 0 1) ZnO single crystals were implanted with 200 keV Ar ions. The ion fluences applied cover a wide range from 5 x 1011 to 7 x 1016 cm-2. The implantation and the subsequent damage analysis by ...
  • Scanning electron microscopy of the surfaces of ion implanted SiC 
    Malherbe, Johan B.; Van der Berg, Nic (Nicolaas George); Kuhudzai, Remeredzai Joseph; Hlatshwayo, Thulani Thokozani; Thabethe, Thabsile Theodora; Odutemowo, Opeyemi Shakirah; Theron, C.C. (Chris); Friedland, Erich Karl Helmuth; Botha, A.J.; Wendler, E. (Elsevier, 2015-07)
    This paper gives a brief review of radiation damage caused by particle (ions and neutrons) bombardment in SiC at different temperatures, and its annealing, with an expanded discussion on the effects occurring on the ...
  • SEM analysis of ion implanted SiC 
    Malherbe, Johan B.; Van der Berg, Nic (Nicolaas George); Botha, A.J.; Friedland, Erich Karl Helmuth; Hlatshwayo, Thulani Thokozani; Kuhudzai, Remeredzai Joseph; Wendler, E.; Wesch, W.; Chakraborty, P.; Da Silveira, E.F. (Elsevier, 2013-11)
    SiC is a material used in two future energy production technologies, firstly as a photovoltaic layer to harness the UV spectrum in high efficient power solar cells, and secondly as a diffusion barrier material for radioactive ...