Browsing by Subject "Electron beam exposure (EBE)"

Browsing by Subject "Electron beam exposure (EBE)"

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  • DLTS characterization of defects in GaN induced by electron beam exposure 
    Ngoepe, Phuti Ngako Mahloka; Meyer, Walter Ernst; Auret, Francois Danie; Omotoso, Ezekiel; Diale, M. (Mmantsae Moche) (Elsevier, 2017-06)
    The deep level transient spectroscopy (DLTS) technique was used to investigate the effects of electron beam exposure (EBE) on n-GaN. A defect with activation energy of 0.12 eV and capture cross section of 8.0 × 10-16 cm2 ...
  • Electrical characterisation of electron beam exposure induced defects in silicon 
    Danga, Helga Tariro; Auret, Francois Danie; Coelho, Sergio M.M.; Diale, M. (Mmantsae Moche) (Elsevier, 2016-01)
    The defects introduced in epitaxially grown p-type silicon (Si) during electron beam exposure were electrically characterised using deep level transient spectroscopy (DLTS) and high resolution Laplace-DLTS. In this process, ...
  • Electrical characterization of electron beam exposure induced defects in epitaxially grown n-type silicon 
    Danga, Helga Tariro; Auret, Francois Danie; Tunhuma, Shandirai Malven; Omotoso, Ezekiel; Igumbor, Emmanuel; Meyer, Walter Ernst (American Institute of Physics, 2019-06-03)
    In this paper, we report on defects introduced in epitaxially grown n-type silicon (Si) during electron beam exposure. The defects observed were electrically characterized using deep-level transient spectroscopy (DLTS) ...