dc.contributor.author |
Bimana, Abadahigwa
|
|
dc.contributor.author |
Sinha, Saurabh
|
|
dc.date.accessioned |
2016-07-04T06:08:20Z |
|
dc.date.issued |
2016-08 |
|
dc.description.abstract |
This paper introduces a matching technique for highly sensitive integrated broadband low-noise
amplifiers. Noise matching is achieved by the paralleling of identical input transistors. Impedance matching,
based on reducing the number of components to the absolute minimum, is done by using the base-collector
capacitance as network element. Using a 0.13 m silicon-germanium (SiGe) bipolar complementary metal
oxide semiconductor process, simulation results indicate a maximum noise figure of 0.462 dB at room
temperature and a return loss better than 10 dB from 300 MHz to 1.4 GHz. The technique demonstrates that
SiGe heterojunction bipolar transistors can be used for cost-effective applications in radio astronomy. |
en_ZA |
dc.description.department |
Carl and Emily Fuchs Institute for Micro-electronics (CEFIM) |
en_ZA |
dc.description.department |
Electrical, Electronic and Computer Engineering |
en_ZA |
dc.description.embargo |
2017-08-31 |
|
dc.description.librarian |
hb2016 |
en_ZA |
dc.description.uri |
http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1098-2760 |
en_ZA |
dc.identifier.citation |
Bimana, A & Sinha, S 2016, 'Increasing the bandwidth of a SiGe HBT LNA with minimum impact on noise figure', Microwave and Optical Technology Letters, vol. 58, no. 8, pp. 1937-1944. |
en_ZA |
dc.identifier.issn |
0895-2477 (print) |
|
dc.identifier.issn |
1098-2760 (online) |
|
dc.identifier.other |
10.1002/mop.29945 |
|
dc.identifier.uri |
http://hdl.handle.net/2263/53593 |
|
dc.language.iso |
en |
en_ZA |
dc.publisher |
Wiley |
en_ZA |
dc.rights |
© 2016 Wiley Periodicals, Inc. This is the pre-peer reviewed version of the following article : Increasing the bandwidth of a SiGe HBT LNA with minimum impact on noise figure, Microwave and Optical Technology Letters, vol. 58, no. 8, pp. 1937-1944, 2016. doi : 10.1002/mop.29945. The definite version is available at : http://onlinelibrary.wiley.comjournal/10.1002/(ISSN)1098-2760. |
en_ZA |
dc.subject |
Broadband amplifiers |
en_ZA |
dc.subject |
Heterojunction bipolar transistor (HBT) |
en_ZA |
dc.subject |
Low-noise amplifiers |
en_ZA |
dc.subject |
Noise figure |
en_ZA |
dc.subject |
Radio astronomy |
en_ZA |
dc.title |
Increasing the bandwidth of a SiGe HBT LNA with minimum impact on noise figure |
en_ZA |
dc.type |
Postprint Article |
en_ZA |