Increasing the bandwidth of a SiGe HBT LNA with minimum impact on noise figure

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dc.contributor.author Bimana, Abadahigwa
dc.contributor.author Sinha, Saurabh
dc.date.accessioned 2016-07-04T06:08:20Z
dc.date.issued 2016-08
dc.description.abstract This paper introduces a matching technique for highly sensitive integrated broadband low-noise amplifiers. Noise matching is achieved by the paralleling of identical input transistors. Impedance matching, based on reducing the number of components to the absolute minimum, is done by using the base-collector capacitance as network element. Using a 0.13 m silicon-germanium (SiGe) bipolar complementary metal oxide semiconductor process, simulation results indicate a maximum noise figure of 0.462 dB at room temperature and a return loss better than 10 dB from 300 MHz to 1.4 GHz. The technique demonstrates that SiGe heterojunction bipolar transistors can be used for cost-effective applications in radio astronomy. en_ZA
dc.description.department Carl and Emily Fuchs Institute for Micro-electronics (CEFIM) en_ZA
dc.description.department Electrical, Electronic and Computer Engineering en_ZA
dc.description.embargo 2017-08-31
dc.description.librarian hb2016 en_ZA
dc.description.uri http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1098-2760 en_ZA
dc.identifier.citation Bimana, A & Sinha, S 2016, 'Increasing the bandwidth of a SiGe HBT LNA with minimum impact on noise figure', Microwave and Optical Technology Letters, vol. 58, no. 8, pp. 1937-1944. en_ZA
dc.identifier.issn 0895-2477 (print)
dc.identifier.issn 1098-2760 (online)
dc.identifier.other 10.1002/mop.29945
dc.identifier.uri http://hdl.handle.net/2263/53593
dc.language.iso en en_ZA
dc.publisher Wiley en_ZA
dc.rights © 2016 Wiley Periodicals, Inc. This is the pre-peer reviewed version of the following article : Increasing the bandwidth of a SiGe HBT LNA with minimum impact on noise figure, Microwave and Optical Technology Letters, vol. 58, no. 8, pp. 1937-1944, 2016. doi : 10.1002/mop.29945. The definite version is available at : http://onlinelibrary.wiley.comjournal/10.1002/(ISSN)1098-2760. en_ZA
dc.subject Broadband amplifiers en_ZA
dc.subject Heterojunction bipolar transistor (HBT) en_ZA
dc.subject Low-noise amplifiers en_ZA
dc.subject Noise figure en_ZA
dc.subject Radio astronomy en_ZA
dc.title Increasing the bandwidth of a SiGe HBT LNA with minimum impact on noise figure en_ZA
dc.type Postprint Article en_ZA


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