Electrical characterization of defects introduced during electron beam deposition of W Schottky contacts on n-type 4H-SiC

Show simple item record

dc.contributor.author Omotoso, Ezekiel
dc.contributor.author Meyer, Walter Ernst
dc.contributor.author Coelho, Sergio M.M.
dc.contributor.author Diale, M. (Mmantsae Moche)
dc.contributor.author Ngoepe, Phuti Ngako Mahloka
dc.contributor.author Auret, Francois Danie
dc.date.accessioned 2016-06-06T11:03:03Z
dc.date.issued 2016-08
dc.description.abstract We have studied the defects introduced in n-type 4H-SiC during electron beam deposition (EBD) of tungsten by deep-level transient spectroscopy (DLTS). The results from currentvoltage and capacitance-voltage measurements showed deviations from ideality due to damage, but were still well suited to a DLTS study. We compared the electrical properties of six electrically active defects observed in EBD Schottky barrier diodes with those introduced in resistively evaporated material on the same material, as-grown, as well as after high energy electron irradiation (HEEI). We observed that EBD introduced two electrically active defects with energies EC – 0.42 and EC – 0.70 eV in the 4H-SiC at and near the interface with the tungsten. The defects introduced by EBD had properties similar to defect attributed to the silicon or carbon vacancy, introduced during HEEI of 4H-SiC. EBD was also responsible for the increase in concentration of a defect attributed to nitrogen impurities (EC – 0.10) as well as a defect linked to the carbon vacancy (EC – 0.67). Annealing at 400 °C in Ar ambient removed these two defects introduced during the EBD. en_ZA
dc.description.department Physics en_ZA
dc.description.embargo 2017-08-31
dc.description.librarian hb2016 en_ZA
dc.description.sponsorship In part by the National Research Foundation (NRF) of South African (Grant specific unique reference number (UID) 78838). en_ZA
dc.description.uri http://www.elsevier.com/locate/mssp en_ZA
dc.identifier.citation Omotoso, E, Meyer, WE, Coelho, SMM, Diale, M, Ngoepe, PNM & Auret, FD 2016, 'Electrical characterization of defects introduced during electron beam deposition of W Schottky contacts on n-type 4H-SiC', Materials Science in Semiconductor Processing, vol. 51, pp. 20-24. en_ZA
dc.identifier.issn 1369-8001 (print)
dc.identifier.issn 1873-4081 (online)
dc.identifier.other 10.1016/j.mssp.2016.04.012
dc.identifier.uri http://hdl.handle.net/2263/52883
dc.language.iso en en_ZA
dc.publisher Elsevier en_ZA
dc.rights © 2016 Elsevier Ltd. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Materials Science in Semiconductor Processing. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Materials Science in Semiconductor Processing, vol. 51, pp. 20-24, 2016. doi : 10.1016/j.mssp.2016.04.012. en_ZA
dc.subject 4H-SiC en_ZA
dc.subject Defects en_ZA
dc.subject Annealing en_ZA
dc.subject Deep-level transient spectroscopy (DLTS) en_ZA
dc.subject Electron beam deposition (EBD) en_ZA
dc.title Electrical characterization of defects introduced during electron beam deposition of W Schottky contacts on n-type 4H-SiC en_ZA
dc.type Postprint Article en_ZA


Files in this item

This item appears in the following Collection(s)

Show simple item record