Igumbor, EmmanuelMapasha, Refilwe EdwinRaji, Abdulrafiu T.2026-02-032026-02-032026-04Igumbor, E., Mapasha, E. & Raji, A.T. 2026, 'Structural, electronic, and magnetic properties of N, P, As, Sb, and Bi dopants in 2D monolayer SiC for high-power electronic application', Computational Condensed Matter, vol. 46, art. e01219, pp. 1-9, doi : 10.1016/j.cocom.2026.e01219.2352-2143 (online)10.1016/j.cocom.2026.e01219http://hdl.handle.net/2263/107797DATA AVAILABILITY : Data will be made available on request.Please read abstract in the article.en© 2026 Elsevier B.V. All rights are reserved, including those for text and data mining, AI training, and similar technologies. Notice : this is the author’s version of a work that was submitted for publication in Computational Condensed Matter. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. A definitive version was subsequently published in Computational Condensed Matter, vol. 46, art. e01219, pp. 1-9, 2026, doi : 10.1016/j.cocom.2026.e01219.DefectFormation energySpin-polarizedCharge transferMonolayer siC2D materialsMagneticSilicon carbide (SiC)Two-dimensional (2D)Preprint Article