Bimana, AbadahigwaSinha, Saurabh2016-07-042016-08Bimana, A & Sinha, S 2016, 'Increasing the bandwidth of a SiGe HBT LNA with minimum impact on noise figure', Microwave and Optical Technology Letters, vol. 58, no. 8, pp. 1937-1944.0895-2477 (print)1098-2760 (online)10.1002/mop.29945http://hdl.handle.net/2263/53593This paper introduces a matching technique for highly sensitive integrated broadband low-noise amplifiers. Noise matching is achieved by the paralleling of identical input transistors. Impedance matching, based on reducing the number of components to the absolute minimum, is done by using the base-collector capacitance as network element. Using a 0.13 m silicon-germanium (SiGe) bipolar complementary metal oxide semiconductor process, simulation results indicate a maximum noise figure of 0.462 dB at room temperature and a return loss better than 10 dB from 300 MHz to 1.4 GHz. The technique demonstrates that SiGe heterojunction bipolar transistors can be used for cost-effective applications in radio astronomy.en© 2016 Wiley Periodicals, Inc. This is the pre-peer reviewed version of the following article : Increasing the bandwidth of a SiGe HBT LNA with minimum impact on noise figure, Microwave and Optical Technology Letters, vol. 58, no. 8, pp. 1937-1944, 2016. doi : 10.1002/mop.29945. The definite version is available at : http://onlinelibrary.wiley.comjournal/10.1002/(ISSN)1098-2760.Broadband amplifiersHeterojunction bipolar transistor (HBT)Low-noise amplifiersNoise figureRadio astronomyPostprint Article