Madito, Moshawe J.Hlatshwayo, Thulani ThokozaniSkuratov, Vladimir AlexeevichMtshali, Christopher B.Manyala, Ncholu I.Khumalo, Zakhelumuzi M.2019-08-152019-11Madito, M.J., Hlatshwayo, T.T., Skuratov, V.A. et al. 2019, 'Characterization of 167 MeV Xe ion irradiated n-type 4H-SiC', Applied Surface Science, vol. 493, pp. 1291-1298.0169-4332 (print)1873-5584 (online)10.1016/j.apsusc.2019.07.147http://hdl.handle.net/2263/71114Please read abstract in the article.en© 2019 Elsevier B.V.. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Applied Surface Science. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. A definitive version was subsequently published in Applied Surface Science, vol. 493, pp. 1291-1298, 2019. doi : 10.1016/j.apsusc.2019.07.147.Rutherford backscattering spectrometry (RBS)Swift heavy ion (SHI)Scanning near-field optical microscopy (SNOM)4H-SiCDepth profilesXe ionsSilicon carbideEpitaxial layerStopping and range of ions in matter (SRIM)Postprint Article