Omotoso, EzekielMeyer, Walter ErnstAuret, Francois DanieParadzah, Alexander TaperaDiale, M. (Mmantsae Moche)Coelho, Sergio M.M.Janse van Rensburg, Pieter Johan2015-09-222015-11Omotoso, E, Meyer, WE, Auret, FD, Paradzah, AT, Diale, M, Coelho, SMM & Janse van Rensburg, PJ 2015, 'The influence of high energy electron irradiation on the schottky barrier height and the richardson constant of Ni/4H-SiC schottky diodes', Materials Science in Semiconductor Processing, vol. 39, pp. 112-118.1369-8001 (print)1873-4081 (online)10.1016/j.mssp.2015.04.031http://hdl.handle.net/2263/50010Please read abstract in the article.en© 2015 Elsevier Ltd. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Materials Science in Semiconductor Processing. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Materials Science in Semiconductor Processing, vol.39, pp. 112-118, 2015. doi : 10.1016/j.mssp.2015.04.031.Richardson constantSilicon carbideHigh energy electron (HEE)Metal-semiconductor (MS)Schottky barrier diodes (SBDs)Postprint Article