Abdalla, Zaki Adam YousifNjoroge, Eric GitauMlambo, MbusoMotloung, Setumo VictorMalherbe, Johan B.Hlatshwayo, Thulani Thokozani2021-12-062022-01Abdalla, Z.A.Y., Njoroge, E.G., Mlambo, M. et al. 2022, 'Isothermal annealing of selenium (Se)-implanted silicon carbide: Structural evolution and migration behavior of implanted Se', Materials Chemistry and Physics, vol. 276, art. 125334, pp. 1-11.0254-058410.1016/j.matchemphys.2021.125334http://hdl.handle.net/2263/82969Please read abstract in the article.en© 2021 Elsevier B.V. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Materials Chemistry and Physics. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. A definitive version was subsequently published in Materials Chemistry and Physics, vol. 276, art. 125334, pp. 1-11, 2022. doi : 10.1016/j.matchemphys.2021.125334.Ion implantationPolycrystalline SiCIsothermal annealingDiffusionVery high temperature gas cooled reactors (VHTGRs)Pebble bed modular reactor (PBMR)Silicon carbide (SiC)Postprint Article