Yahyaoui, MakremAouassa, MansourBouabdellaoui, MohammedAmdouni, SoniaAladim, A.K.Ali, Abdulraoof I.Boujdaria, Kais2025-02-132024-10Yahyaoui, M., Aouassa, M., Bouabdellaoui, M. et al. MBE growth of highly sensitive silicon PIN diode with magnetic Mn-doped Ge quantum dots for photodetector and solar cell applications. Applied Physics A 130, 762 (2024). https://doi.org/10.1007/s00339-024-07926-5.0947-8396 (print)1432-0630 (online)10.1007/s00339-024-07926-5http://hdl.handle.net/2263/100821DATA AVAILABILITY : Data will be made available on reasonable request.Please read abstract in the article.en© The Author(s), under exclusive licence to Springer-Verlag GmbH Germany, part of Springer Nature 2024. The original publication is available at : https://link.springer.com/journal/339.PIN diodesMn-doped-Ge quantum dotsMolecular beam epitaxyStranski-KrastanovPhotodetectorSolar cell applicationsUltra-high vacuum molecular beam epitaxy (UHV-MBE)SDG-09: Industry, innovation and infrastructurePostprint Article