Friedland, Erich Karl HelmuthVan der Berg, Nic (Nicolaas George)Hlatshwayo, Thulani ThokozaniKuhudzai, Remeredzai JosephMalherbe, Johan B.Wendler, E.2012-01-242012-01-242012Friedland, E et al., Diffusion behaviour of cesium in silicon carbide, Nuclear Instruments & Methods in Physics Research Section B : Beam Interactions with Materials and Atoms. (2012), doi:10.1016/j.nimb.2011.11.0480168-583X (print)1872-9584 (online)10.1016/j.nimb.2011.11.048http://hdl.handle.net/2263/17877Diffusion behaviour of ion implanted cesium into 6H-SiC and CVD-SiC wafers is investigated by Rutherford backscattering spectrometry (RBS) combined with α-particle channelling and scanning electron microscopy (SEM). Implantations were done at room temperature, 350 °C and 600 °C. A strong temperature dependence of irradiation induced diffusion is observed. Transport mechanisms were studied by isochronal and isothermal annealing methods up to temperatures of 1500 °C. Cesium transport in irradiation damaged SiC is governed by an impurity trapping mechanism of defect structures and is similar in single and polycrystalline SiC.en© 2012 Published by Elsevier B.V.Isochronal and isothermal annealingDiffusionCesium -- Diffusion rateSilicon carbideIon implantationPostprint Article