Auret, Francois DanieMeyer, Walter ErnstDiale, M. (Mmantsae Moche)Janse van Rensburg, Pieter JohanSong, S.F.Temst, K.Vantomme, A.2016-10-192016-10-192011-03F.D. Auret, W.E. Meyer, M. Diale, P.J. Janse Van Rensburg, S.F. Song, K. Temst, A. Vantomme, 2011, "Electrical Characterization of Metastable Defects Introduced in GaN by Eu-Ion Implantation", Materials Science Forum, vols. 679-680, pp. 804-807.0255-547610.4028/www.scientific.net/MSF.679-680.804http://hdl.handle.net/2263/57382Gallium nitride (GaN), grown by HVPE, was implanted with 300 keV Eu ions and then annealed at 1000 oC . Deep level transient spectroscopy (DLTS) and Laplace DLTS (L-DLTS) were used to characterise the ion implantation induced defects in GaN. Two of the implantation induced defects, E1 and E2, with DLTS peaks in the 100 – 200 K temperature range, had DLTS signals that could be studied with L-DLTS. We show that these two defects, with energy levels of 0.18 eV and 0.27 eV below the conduction band, respectively, are two configurations of a metastable defect. These two defect states can be reproducibly removed and re-introduced by changing the pulse, bias and temperature conditions, and the transformation processes follow first order kinetics.en© 2011 by Trans Tech Publications Inc. All Rights Reserved.Gallium Nitride (GaN)Ion implantationMetastable defectsDeep level transient spectroscopy (DLTS)Postprint Article