Friedland, Erich Karl Helmuth2007-07-302007-07-302007-03Friedland, E 2007, ‘A study of amorphization energies in silicon for different implantation parameters’, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol. 256, issue 1, pp. 193-198 [http://www.sciencedirect.com/science/journal/0168583X]0168-583X10.1016/j.nimb.2006.12.002http://hdl.handle.net/2263/3188Please open article to read abstract366516 bytesapplication/pdfenElsevierAmorphizationDamage profilesIon implantationSiliconChanneling (Physics)Postprint Article