Abdalla, Zaki Adam YousifIsmail, Mahjoub Yagoub AbdallaNjoroge, Eric GitauHlatshwayo, Thulani ThokozaniWendler ElkeMalherbe, Johan B.2020-04-022020-05Abdalla, Z.A.Y., Ismail, M.Y.A., Njoroge, E.G. et al. 2020, 'Migration behaviour of selenium implanted into polycrystalline 3C–SiC', Vacuum, vol. 175, art. 109235, pp. 1-6.0042-207X (print)1879-2715 (online)10.1016/j.vacuum.2020.109235http://hdl.handle.net/2263/73909Please read abstract in the article.en© 2020 Elsevier Ltd. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Vacuum. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. A definitive version was subsequently published in Vacuum, vol. 175, art. 109235, pp. 1-6, 2020. doi : 10.1016/j.vacuum.2020.109235.DiffusionPolycrystallineSilicon carbide (SiC)Raman spectroscopyRutherford backscattering spectrometry (RBS)Scanning electron microscopy (SEM)Migration behaviour of selenium implanted into polycrystalline 3C–SiCPostprint Article