Ahmed, M.A.M.Auret, Francois DanieNel, Jacqueline MargotVenter, A.2024-10-302024-10-302024-09Ahmed, M.A.M., Auret, F.D., Nel, J.M. et al. A DLTS analysis of alpha particle irradiated commercial 4H-SiC Schottky barrier diodes. Journal of Materials Science: Materials in Electronics 35, 1797 (2024). https://doi.org/10.1007/s10854-024-13507-2.0957-4522 (print)1573-482X (online)10.1007/s10854-024-13507-2http://hdl.handle.net/2263/98837DATA AVAILABILITY : Data used in this study will be available upon request from the corresponding author.Please read abstract in the article.en© The Author(s), 2024. Open Access. This article is licensed under a Creative Commons Attribution 4.0 International License.Schottky barrier diodes (SBDs)5.4 MeV alpha particlesTransmission electron microscopy (TEM)Energy dispersive spectroscopy (EDS)Deep level transient spectroscopy (DLTS)SDG-09: Industry, innovation and infrastructureA DLTS analysis of alpha particle irradiated commercial 4H-SiC Schottky barrier diodesArticle