Goosen, Marius EugeneVenter, Petrus J.Faure, Nicolaas M.Msomi, Promise N.Schoeman, JohanJoubert, Trudi-Heleen2023-11-022023-06Goosen, M.E., Venter, P.J., Fauré, N.M. et al. 2023, 'Hot carrier degradation of mixed-mode polysilicon light emitting diodes', Materials Science and Engineering: B, vol. 292, art. 116391, pp. 1-10, doi : 10.1016/j.mseb.2023.116391.0921-5107 (print)1873-1944 (online)10.1016/j.mseb.2023.116391http://hdl.handle.net/2263/93156DATA AVAILABILITY : The data that has been used is confidential. The raw/processed data required to reproduce these findings cannot be shared at this time due to legal reasons. This may be provided on request.This paper investigates the degradation and reliability of polysilicon light emitters implemented in a standard 0.35 μm CMOS process. A total of 48 identical hot carrier electroluminescent emitters were subjected to high temperature operating life tests. The results show the first reported degradation in reverse biased silicon light emitter intensity, consistent with hot carrier degradation. The degradation is shown to be strongly dependent on the stress current, while little to no dependence on temperature stress is noticed. With the device operating in a mixed-mode regime, it is postulated that hydrogen dissociation and generation of interface states through hot carrier stress increases the non-radiative tunnelling mechanisms reducing the optical intensity with increased stress. Degradation model parameters are extracted to predict light emitter lifetime and to provide long life design criteria for these polysilicon light emitters.en© 2023 Elsevier B.V. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Materials Science and Engineering: B. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. A definitive version was subsequently published in Materials Science and Engineering: B, vol. 292, art. 116391, pp. 1-10, doi : 10.1016/j.mseb.2023.116391.ReliabilitySilicon light emitting deviceSilicon electroluminescenceHydrogen migration modelHot carrier degradationAvalanche light emitting diodesPostprint Article